Product Information

SH8K52GZETB

SH8K52GZETB electronic component of ROHM

Datasheet
MOSFET 100V NCH+NCH POWER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6502 ea
Line Total: USD 1.65

1941 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1934 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1984
10 : USD 1.005
100 : USD 0.8056
500 : USD 0.7024
1000 : USD 0.5885
2500 : USD 0.5624
5000 : USD 0.5624
10000 : USD 0.5399

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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SH8K52 Datasheet 100V Nch+Nch Power MOSFET llOutline V 100V DSS R (Max.) 170m DS(on) SOP8 I 3.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SH8K52 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V 100 V DSS I Continuous drain current 3.0 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 3.0 A AS *2 E Avalanche energy, single pulse 6.5 mJ AS *3 P 2.0 D Power dissipation (total) W *4 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. SH8K52 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *4 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 3A - 120 170 GS D Static drain - source *5 R V = 4.5V, I = 3A - 130 180 m DS(on) GS D on - state resistance V = 4.0V, I = 3A - 135 190 GS D R Gate resistance f = 1MHz, open drain - 6.9 - G Forward Transfer *5 Y V = 10V, I = 3A 3.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1mH, V = 50V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a Cu board (25250.8mm) *5 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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