Product Information

SH8KA1GZETB

SH8KA1GZETB electronic component of ROHM

Datasheet
MOSFET 30V NCH+NCH POWER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8958 ea
Line Total: USD 0.9

2948 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3038 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7819
10 : USD 0.6811
100 : USD 0.4829
500 : USD 0.4153
1000 : USD 0.3643
2500 : USD 0.3204
5000 : USD 0.3204
10000 : USD 0.3097
25000 : USD 0.3061

     
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SH8KA1 Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 80m DS(on) SOP8 I 4.5A D P 2.7W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Motor Drive Basic ordering unit (pcs) 2500 Taping code TB Marking SH8KA1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 4.5 A D *2 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 4.0 A AS *3 E Avalanche energy, single pulse 1.1 mJ AS *1 P 2.7 D *4 P Power dissipation (total) 2.0 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20171018 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. SH8KA1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 21 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 100 nA GSS DS GS leakage current Gate threshold V V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 4.5A - 57 80 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 4.0A - 88 125 GS D Gate resistance R f = 1MHz, open drain - 3.5 - G Forward Transfer *6 Y V = 5.0V, I = 4.0A 1.7 - - S fs DS D Admittance *1 Pw 1s, Mounted on a ceramic board (30300.8mm), Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a Cu board (40400.8mm) *6 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20171018 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
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ROHM Semiconductor

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