SIR-56ST3F ROHM

Infrared light emitting diode, top view type SIR-56ST3F Datasheet The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household remote control devices. Applications Outline Optical control equipment Light source for remote control devices Features High efficiency, high output P =8.0mW (I =50mA). 1) O F 2) Emission spectrum well suited to silicon detectors 3) Good current-optical output linearity. 4) Long life, high reliability. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit I Forward current 100 mA F V 5 V Reverse voltage R P 160 mW Power dissipation D I * Pulse forward current 500 mA FP T Operating temperature 25 to 85 C opr T Storage temperature 40 to 85 C stg *Pulse width = 0.1 msec, duty ratio 1% www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.C 1/4Datasheet SIR-56ST3F Electrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. P I =50mA -8.0 - mW Optical output O F I I =50mA Emitting strength 5.6 - - mW/sr E F V I =100mA -1.3 1.6 V Forward voltage F F I V =3V Reverse current -- 10 A R R I =50mA - 950 - nm Peak light emitting wavelength p F I =50mA Spectral line half width -40 - nm F I =50mA - - deg Half-viewing angle 15 1/2 F I =50mA Response time trtf - 1.0 - s F f I =50mA Cut-off frequency -1.0 -MHz C F Classified table of rank Emitting Strength I Item Unit E 5.6 11.7 mW / sr Lto Mt8.2o 17.6 mW / sr 12.3 25.8 mW / sr Nto Pt18.0o 38.8 mW / sr Condition I =50mA F www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.C 2/4