Product Information

SMF26VTFTR

SMF26VTFTR electronic component of ROHM

Datasheet
ESD Suppressors TVS Diodes 26V Vrwm 1000mW PD SOD-123FL; PMDU

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4616 ea
Line Total: USD 0.46

2863 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2863 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.4616
10 : USD 0.3595
100 : USD 0.2195
500 : USD 0.2029
1000 : USD 0.1459
3000 : USD 0.1341
9000 : USD 0.1222
24000 : USD 0.1222
45000 : USD 0.1175

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
LoadingGif

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SMF26VTF Transient Voltage Suppressor (AEC-Q101 qualified) Data sheet Outline V V 26 RWM P 200 W PP I 4.8 A PP Feature Inner Circuit High reliability Small mold type Application Packaging Specification Surge Protection Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Quantity(pcs) 3000 Silicon Epitaxial Planar Taping Code TR Marking UW (T = 25) Absolute Maximum Rating a Min. Max. Parameter Symbol Conditions Unit P Peak Pulse Power tp=10/1000us - 200 W pp I Peak Pulse Current tp=10/1000us - 4.8 A pp P Power dissipation on Glass-epoxy substrate - 1 W D T Junction temperature - - 150 j T Storage temperature - -65 150 stg Air - 30 kV ESD capability V IEC61000-4-2 ESD Contact - 30 kV www.rohm.com 1/6 2019- ROHM Co., Ltd. All rights reserved. 2019/05/30 Rev.006SMFxxVTF Series Data sheet Characteristic (Ta = 25C) Symbol Reverse Stand-off voltage Breakdown voltage Reverse Current Clamping voltage V Rank(V) Z (1) I (A) V (V) V (V) V (V) RWM BR R CL I (mA) V (V) I (A) MIN. MAX. MAX. MAX. T R PP 5.0 6.40 40 5.0 5.0 9.2 21.7 5.0 6.0 6.67 40 26 6.0 10.3 19.4 6.0 6.5 7.72 40 20 6.5 11.2 17.9 6.5 7.0 7.78 40 3.0 7.0 12.0 16.7 7.0 7.5 8.33 40 0.1 7.5 12.9 15.5 7.5 8.0 8.89 40 0.1 8.0 13.6 14.7 8.0 9.0 10.0 40 0.1 9.0 15.4 13.0 9.0 10.0 11.1 20 0.1 10 17.0 11.8 10 11.0 12.2 20 0.1 11 18.2 11.0 11 12.0 13.3 20 0.1 12 19.9 10.1 12 13.0 14.4 20 0.1 13 21.5 9.3 13 14.0 15.6 20 0.1 14 23.2 8.6 14 15.0 16.7 20 0.1 15 24.4 8.2 15 16.0 17.2 20 0.1 16 26.0 7.7 16 17.0 18.9 20 0.1 17 27.6 7.2 17 18.0 20.0 20 0.1 18 29.2 6.8 18 20.0 22.2 10 0.1 20 32.4 6.2 20 22.0 24.4 10 0.1 22 35.5 5.6 22 24.0 26.7 10 0.1 24 38.9 5.1 24 26.0 28.9 10 0.1 26 42.1 4.8 26 28.0 31.1 10 0.1 28 45.4 4.4 28 30.0 33.3 10 0.1 30 48.4 4.1 30 33.0 36.7 10 0.1 33 53.3 3.8 33 Note(1) V test time is 40ms. BR Marking V Rank(V) V Rank(V) Z Marking Z Marking 5.0 AW 15.0 NW 6.0 BW 16.0 PW 6.5 CW 17.0 YW 7.0 DW 18.0 QW 7.5 EW 20.0 RW 8.0 FW 22.0 SW 9.0 GW 24.0 TW 10.0 HW 26.0 UW 11.0 JW 28.0 VW 12.0 KW 30.0 WW 13.0 LW 33.0 XW 14.0 MW www.rohm.com 2/6 2019- ROHM Co., Ltd. All rights reserved. 2019/05/30 Rev.006

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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