SP8J5 SP8J5FRA Transistors AEC-Q101 Qualified 4V Drive Pch+Pch MOS FET SP8J5 FRA Structure External dimensions (Unit : mm) Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 ( ) (5) 8 Features 1) Low On-resistance. (25m at 4.5V) 2) High Power Package. (PD=2.0W) 3) High speed switching. (1) (4) 4) Low voltage drive. (4V) 0.2 1.27 1pin mark Each lead has same dimensions Applications Power switching, DC-DC converter Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Quantity (pcs) 2500 SP8J5FRA 2 2 (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE Absolute maximum ratings (Ta=25 C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Limits Unit V 30 V Drain-source voltage DSS Gate-source voltage VGSS 20 V Continuous ID 7.0 A Drain current 1 Pulsed IDP 28 A Continuous I 1.6 A Source current S 1 (Body diode) Pulsed ISP 28 A 2 Total power dissipation PD 2.0 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 62.5 C / W Mounted on a ceramic board. 1/4 20190527-Rev.C 3.9 6.0 0.4Min.SP8J5 SP8J5FRA Transistors Electrical characteristics (Ta=25 C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage V 1.0 2.5 V V =10V, I =1mA GS (th) DS D 20 28 m ID=7A, VGS=10V Static drain-source on-state RDS (on) 25 35 m ID=3.5A, VGS=4.5V resistance 30 42 m I =3.5A, V =4.0V D GS Forward transfer admittance Yfs 6.0 SVDS=10V, ID=3.5A Input capacitance Ciss 2600 pF VDS=10V Output capacitance Coss 450 pF VGS=0V Reverse transfer capacitance C 350 pF f=1MHz rss Turn-on delay time td (on) 20 ns ID=3.5A VDD 15V Rise time tr 50 ns VGS=10V Turn-off delay time t 110 ns d (off) RL=4.3 t RG=10 Fall time f 70 ns Total gate charge Qg 25 nC VDD 15V Gate-source charge Qgs 5.5 nC VGS=5V Gate-drain charge Q 10 nC I =7A gd D Pulsed Body diode characteristics (Source-drain) (Ta=25 C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I =1.6A, V =0V S GS 2/4 20190527-Rev.C