SP8M10FRA SP8M10 Transistors AEC-Q101 Qualified 4V Drive Nch+Pch MOSFET SP8M10FRA SP8M10 z Structure z Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET SOP8 5.0 1.75 0.4 ( ) (8) 5 z Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). ( ) ( ) 1 4 0.2 1.27 1pin mark z Application Power switching, DC / DC converter. Each lead has same dimensions z Packaging specifications z Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Quantity (pcs) 2500 SP8M10FRASP8M10 2 2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate 1 1 (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (1) (2) (3) (4) (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain 1 ESD PROTECTION DIODE (8) Tr1 (Nch) Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Nchannel Pchannel Drain-source voltage VDSS 30 30 V Gate-source voltage V 20 20 V GSS Continuous ID 7.0 4.5 A Drain current 1 Pulsed IDP 28 18 A Source current Continuous I 1.6 1.6 A S 1 (Body diode) Pulsed ISP 28 18 A 2 Total power dissipation PD 2 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD. z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. 1/5 20190527-Rev.C Not Recommended for New Designs 3.9 6.0 0.4Min.SP8M10FRA SP8M10 Transistors N-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AV GS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AV DS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 17 25 I =7.0A, V =10V D GS Static drain-source on-state RDS (on) 23 35 m ID=7.0A, VGS=4.5V resistance 25 37 ID=7.0A, VGS=4V Forward transfer admittance Y 5.0 S I =7.0A, V =10V fs D DS Input capacitance Ciss 600 pF VDS=10V Output capacitance Coss 200 pF VGS=0V Reverse transfer capacitance C 120 pF f=1MHz rss Turn-on delay time td (on) 8 ns ID=3.5A, VDD 15V Rise time tr 10 ns VGS=10V Turn-off delay time t 37 ns R =4.29 d (off) L Fall time tf 11 ns RG=10 Total gate charge Qg 8.4 nC VDD 15V Gate-source charge Q 1.9 nC V =5V gs GS Gate-drain charge Qgd 3.3 nC ID=7.0A Pulsed z Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V 1.2 V I =6.4A, V =0V SD S GS Pulsed 2/5 20190527-Rev.C Not Recommended for New Designs