Product Information

STZ6.2NFHT146

STZ6.2NFHT146 electronic component of ROHM

Datasheet
Zener Diodes 5.81-6.4V 200mW SOT-346 5mA
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5095 ea
Line Total: USD 0.51

2809 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1600 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4473
10 : USD 0.3784
100 : USD 0.2668
500 : USD 0.2541
3000 : USD 0.1552
9000 : USD 0.1541
24000 : USD 0.1518
45000 : USD 0.1472

Read More Specifications

     
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Test Current
Qualification
Ir - Maximum Reverse Leakage Current
Hts Code
LoadingGif

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Zener diode STZ6.2NFH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Voltage regulation 1.9 (Anode common twin type) 2.90.2 0.1 Each lead has same dimension 0.4 0.05 0.1 Features 0.15 0.06 0.95 (3) 1) Small mold type. (SMD3) 2) High reliability. 0.8MIN. 00.1 SMD3 (2) (1) 0.80.1 0.95 0.95 0.2 Construction 1.10.2 1.1 0.1 0.01 1.90.2 Silicon epitaxial planar Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) 1.50.1 2.00.05 4.00.1 0.30.1 0 1.05MIN 3.20.1 4.00.1 1.350.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Power dissipation (*1) 200 PmW Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) Total of 2 elements Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 5.81 - 6.40 V I =5mA Z Z I Reverse current - - 1.00 A V =3.0V R R Z Operating resistance -- 60 I =5mA Z Z Z I =0.5mA Rising operating resistance - - 100 Zk Z www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.03 - Rev.B 2.80.2 0.2 1.6 0.1 0.30.6 3.20.1 1.0MIN. 00.5 5.50.2 3.50.05 1.750.1 8.00.2 3.20.1 2.4STZ6.2NFH Data Sheet Ta=150 Ta=125 1000 10 100 f=1MHz 100 Ta=25 Ta=75 1 10 Ta=75 Ta=-25 Ta=125 1 0.1 Ta=25 10 0.1 Ta=150 0.01 Ta=-25 0.01 0.001 0.001 0.0001 1 55.5 6 6.57 00.511.52 2.53 01 23 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 1 6.5 30 0.9 Ta=25 29 Ta=25 Ta=25 VR=3.0V f=1MHz IZ=5mA 6.4 0.8 28 n=30pcs VR=0V n=30pcs 0.7 27 n=10pcs 0.6 26 6.3 0.5 25 24 6.2 0.4 0.3 23 AVE:21.59pF AVE:0.138nA 22 6.1 0.2 AVE:6.245V 0.1 21 20 6 0 Ct DISRESION MAP Vz DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) 100 Rth(j-c) 10 Mounted on epoxy board IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.03 - Rev.B ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() TRANSIENT REVERSE CURRENT:IR(nA) REVERSE CURRENT:IR (nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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