UDZLVTE-17150 ROHM

UDZLV150 Zener Diode Data sheet Outline P 200 mW D Feature Inner Circuit High reliability Small mold type Application Packaging Specification Packing Embossed Tape Voltage regulation Reel Size(mm) 180 Taping Width(mm) 8 Quantity(pcs) 3000 Structure Taping Code TE-17 Silicon Epitaxial Planar Marking BT (T = 25C) Absolute Maximum Rating a Parameter Symbol Limits Unit Power dissipation P 200 mW D Junction temperature T 150 j Storage temperature T -55 150 stg www.rohm.com 1/6 2017 ROHM Co., Ltd. All rights reserved. 2020/12/04 Rev.005UDZLV Series Data sheet Characteristic (T = 25C) a Symbol Dynamic ImpedanceZ () Reverse Current I (A) Zener VoltageV (V) Z R P/N Z MIN. MAX. I (mA) MAX. I (mA) MAX. V (V) z z R UDZLV 51 48.0 54.0 2 180 2 1 39 UDZLV 56 53.0 60.0 2 180 2 1 43 UDZLV 62 58.0 66.0 2 200 2 0.2 47 UDZLV 68 64.0 72.0 2 250 2 0.2 52 UDZLV 75 70.0 79.0 2 300 2 0.2 57 UDZLV 82 77.0 87.0 2 300 2 0.2 63 UDZLV 91 85.0 96.0 1 700 1 0.2 69 UDZLV 100 94.0 106.0 1 700 1 0.2 76 UDZLV 110 104.0 116.0 1 800 1 0.2 84 UDZLV 120 114.0 126.0 1 900 1 0.2 91 UDZLV 130 122.0 138.0 1 1250 1 0.2 102 UDZLV 150 140.0 160.0 1 1500 1 0.2 120 Zener voltage (V ) is measured by applying current with 40ms pulse. Z Dynamic resistance (Z ) is measured by applying small current (AC) and specified current (I ) simultaneously. Z Z Marking P/N Marking P/N Marking UDZLV 51 0T UDZLV 91 6T UDZLV 56 1T UDZLV 100 7T UDZLV 62 2T UDZLV 110 8T UDZLV 68 3T UDZLV 120 9T UDZLV 75 4T UDZLV 130 AT UDZLV 82 5T UDZLV 150 BT www.rohm.com 2/6 2017 ROHM Co., Ltd. All rights reserved. 2020/12/04 Rev.005