EMB2 / UMB2N / IMB2A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V 50V CC (4) (4) (1) (1) (2) I (2) 100mA C(MAX.) (3) (3) R 47k 1 EMB2 UMB2N R 47k (SC-107C) SOT-363 (SC-88) 2 SMT6 (4) (5) Features (6) 1) Built-In Biasing Resistors, R = R = 47k . 1 2 (3) (2) 2) Two DTA144E chips in one package. (1) 3) Built-in bias resistors enable the configuration of IMB2A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of EMB2 / UMB2N IMB2A completely eliminating parasitic effects. OUT IN GND OUT IN GND 5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. Application (1) (2) (3) (3) (2) (1) GND IN OUT GND IN OUT Inverter circuit, Interface circuit, Driver circuit Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMB2 EMT6 1616 T2R 180 8 8,000 B2 UMB2N UMT6 2021 TN 180 8 3,000 B2 IMB2A SMT6 2928 T110 180 8 3,000 B2 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 1/7Data Sheet EMB2 / UMB2N / IMB2A Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V V Supply voltage 50 CC V 40 to 10 V Input voltage IN I Output current 30 mA O *1 Collector current I 100 mA C(MAX.) *3 Power dissipation EMB3 / UMB3N mW 150 (Total) *2 P D *4 IMB3A mW 300 (Total) T 150 C Junction temperature j T C Range of storage temperature 55 to 150 stg Electrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100A -- 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3.0 - - O O I(on) V I / I = 10mA / 0.5mA Output voltage - 0.1 0.3 V O(on) O I I V = 5V Input current -- 0.18 mA I I Output current I V = 50V, V = 0V -- 0.5 A O(off) CC I DC current gain G V = 5V, I = 5mA 68 --- I O O R Input resistance - 32.9 47 61.1 k 1 R /R - Resistance ratio 0.8 1 1.2 - 2 1 V = 10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 2/7