EMC2 / UMC2N / FMC2A Transistors Power management (dual digital transistors) EMC2 / UMC2N / FMC2A zz zz External dimensions (Units : mm) z z z z Features 1) Includes a DTA124E and DTC124E transistor in a EMC2 EMT or UMT or SMT package. ( ) 2) Ideal for power switch circuits. (4) 3 ( ) 2 ( ) (1) 5 3) Mounting cost and area can be cut in half. 1.2 1.6 Each lead has same dimensions zz zz Structure ROHM : EMT5 Epitaxial planar type Abbreviated symbol: C2 A PNP and a NPN digital transistor (each with two built in resistors) UMC2N The following characteristics apply to both DTr1 and DTr2,, however, the - sign on DTr2, values for the PNP type 1.25 2.1 have been omitted. 0.1Min. Each lead has same dimensions zz zz Equivalent circuit ROHM : UMT5 EIAJ : SC-88A EMC2 / UMC2N FMC2A Abbreviated symbol: C2 (3) (2) (1) (3) (4) (5) FMC2A R1 R1 R2 R2 R2 DTr1 R2 DTr1 DTr2 DTr2 R1 R1 (4) (5) (2) (1) 1.6 2.8 R1=22k R1=22k R2=22k R2=22k 0.3to0.6 Each lead has same dimensions ROHM : SMT5 zz zz Packaging specifications EIAJ : SC-74A Abbreviated symbol: C2 Packaging Taping Code T2R TR T148 Type Basic ordering unit (pieces) 8000 3000 3000 EMC2 UMC2N FMC2A 0.3 0.15 0.2 0.15 0.13 0.22 ( ) (1) 2 ( ) (5) 4 0to0.1 0to0.1 ( ) (5) 4 (3) (1) (3) (2) 0.5 0.5 0.95 0.95 1.0 0.8 1.9 0.7 0.65 0.65 0.5 1.6 2.9 1.1 0.9 1.3 2.0EMC2 / UMC2N / FMC2A Transistors zz zz Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Supply voltage VCC 50 V 40 Input current VIN V 10 IO 30 Output current mA IC (Max.) 100 1 EMC2,UMC2N 150 (TOTAL) Power Pd mW dissipation FMC2A 300 (TOTAL) 2 Junction temperature Tj 150 C Tstg 55~+150 C Storage temperature 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. zz zz Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions VI (off) 0.5 VCC=5V, IO=100 A Input voltage V VI (on) 3 VO=0.2V, IO=5mA Output voltage VO (on) 0.1 0.3 V IO/II=10mA/0.5mA Input current II 0.36 mA VI=5V IO (off) 0.5 A VCC=50V, VI=0V Output current DC current gain GI 56 VO=5V, IO=5mA Transition frequency fT 250 MHz VCE=10mA, IE=5mA, f=100MHz Input resistance R1 15.4 22 28.6 k Resistance ratio R2/R1 0.8 1 1.2 Transition frequency of the device zz zz Electrical characteristic curves DTr1 10m 100 1k VO=0.2V VCC=5V VO=5V 5m 50 500 2m Ta=100C 20 Ta=100C 200 25C 1m 25C 40C 10 500 100 40C Ta=40C 200 5 50 25C 100 100C 20 2 50 1 10 20 10 500m 5 5 200m 2 2 1 100m 1 100 200 500 1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) Fig.1 Input voltage vs. output current Fig.3 DC current gain vs. output Fig.2 Output current vs. input voltage (ON characteristics) current (OFF characteristics) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI