EMD12 / UMD12N Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) <For DTr1(NPN)> lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) V 50V CC (1) (1) (2) I 100mA C(MAX.) (2) (3) (3) R 47k W 1 EMD12 UMD12N (SC-107C) SOT-363 (SC-88) R 47k W 2 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) R 47k W 1 R 47k W 2 lFeatures lInner circuit 1) Both the DTC144E chip and DTA144E chip OUT IN GND (6) (5) (4) in one package. 2) Built-in bias resistors enable the configuration of R 1 R 2 DTr1 an inverter circuit without connecting external DTr2 R input resistors (see inner circuit). 2 R 1 3) The bias resistors consist of thin-film resistors (1) (2) (3) with complete isolation to allow negative biasing GND IN OUT of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Lead Free/RoHS Compliant. lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMD12 EMT6 1616 T2R 180 8 8,000 D12 UMD12N UMT6 2021 TR 180 8 3,000 D12 www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 1/7Data Sheet EMD12 / UMD12N lAbsolute maximum ratings (Ta = 25C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage V 50 V -50 CC Input voltage V V -10 to +40 -40 to +10 IN I Output current 30 -30 mA O *1 Collector current I 100 -100 mA C(MAX.) *2 *3 Power dissipation P mW 150 (Total) D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg lElectrical characteristics(Ta = 25C) <For DTr1(NPN)> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100mA - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3.0 - - I(on) O O V I / I = 10mA / 0.5mA Output voltage - 0.1 0.3 V O(on) O I I V = 5V Input current - - 0.18 mA I I I V = 50V, V = 0V Output current - - 0.5 mA O(off) CC I DC current gain G V = 5V, I = 5mA 68 - - - I O O Input resistance R - 32.9 47 61.1 k W 1 Resistance ratio R /R - 0.8 1 1.2 - 2 1 V = 10V, I = -5mA *1 CE E Transition frequency f - 250 - MHz T f = 100MHz lElectrical characteristics(Ta = 25C) <For DTr2(PNP)> Parameter Symbol Conditions Min. Typ. Max. Unit V V = -5V, I = -100mA - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -2mA - - -3.0 I(on) O O Output voltage V I / I = -10mA / -0.5mA - V -0.1 -0.3 O(on) O I Input current I V = -5V - - mA -0.18 I I I V = -50V, V = 0V Output current - - -0.5 mA O(off) CC I G DC current gain V = -5V, I = -5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k W 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = -10V, I = 5mA *1 CE E Transition frequency - 250 - MHz f T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 2/7