UMD22NFHATR ROHM

UMD22NFHATR electronic component of ROHM
UMD22NFHATR ROHM
UMD22NFHATR Bipolar Transistors - Pre-Biased
UMD22NFHATR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UMD22NFHATR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMD22NFHATR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. UMD22NFHATR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP+NPN Digital transistor (with built-in resistors)
Datasheet: UMD22NFHATR Datasheet (PDF)
Price (USD)
1: USD 0.5075 ea
Line Total: USD 0.51 
Availability : 5742
  
Ship by Mon. 25 Aug to Wed. 27 Aug
QtyUnit Price
1$ 0.5075
10$ 0.31
100$ 0.1896
500$ 0.1331
1000$ 0.1199
3000$ 0.1023
6000$ 0.0946
9000$ 0.0825
24000$ 0.0825

Availability 5742
Ship by Mon. 25 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5075
10$ 0.31
100$ 0.1896
500$ 0.1331
1000$ 0.1199
3000$ 0.1023
6000$ 0.0946
9000$ 0.0825
24000$ 0.0825

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMD22NFHATR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMD22NFHATR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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UMD22N FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified <For DTr1(NPN)> llOutline Parameter Value SOT-363 V 50V CC SC-88 I 100mA C(MAX.) R 4.7k 1 R 47k UMT6 2 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) R 4.7k 1 R 47k 2 llFeatures llInner circuit 1)Both the DTA143Z chip and DTC143Z chip in a UMT6 package. 2)Mounting possible with UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMD22N FHA 2021 TR 180 8 3000 D22 (UMT6) www.rohm.com 1/7 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.UMD22N FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage V 50 -50 V CC V Input voltage -5 to 30 -30 to 5 V IN I Output current 100 -100 mA O *1 I Collector current 100 -100 mA C(MAX) *2*3 P Power dissipation 150 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.3 - - I(on) O O V I = 5mA, I = 250A Output voltage - 100 300 mV O(on) O I I V = 5V Input current - - 1.8 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 10mA DC current gain 80 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -1.3 - - I(on) O O V Output voltage I = -5mA, I = -250A - -100 -300 mV O(on) O I I Input current V = -5V - - -1.8 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G V = -5V, I = -10mA DC current gain 80 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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