UMG3NTR ROHM

UMG3NTR electronic component of ROHM
UMG3NTR ROHM
UMG3NTR Bipolar Transistors - Pre-Biased
UMG3NTR Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UMG3NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMG3NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. UMG3NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL NPN 50V 100MA SOT-353
Datasheet: UMG3NTR Datasheet (PDF)
Price (USD)
10: USD 0.0962 ea
Line Total: USD 0.96 
Availability : 2473
  
Ship by Fri. 28 Nov to Thu. 04 Dec
QtyUnit Price
10$ 0.0962
100$ 0.0734
300$ 0.062
3000$ 0.036
6000$ 0.0314
9000$ 0.0292

 UMG3NTR More Buying Options & Price Grid(s)
Availability 8730
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0721
9000$ 0.0702
15000$ 0.0668
30000$ 0.0649

Availability 2473
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0962
100$ 0.0734
300$ 0.062
3000$ 0.036
6000$ 0.0314
9000$ 0.0292

Availability 5218
Ship by Wed. 26 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4963
10$ 0.3062
100$ 0.186
500$ 0.1309
1000$ 0.1177
3000$ 0.1001
6000$ 0.0913
9000$ 0.0814
24000$ 0.0803

Availability 45205
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 823
Multiples : 1
QtyUnit Price
823$ 0.5863

Availability 2667
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1424
Multiples : 1
QtyUnit Price
1424$ 0.1826
1472$ 0.1767
2500$ 0.1649

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMG3NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMG3NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMG3 / UMG3N / FMG3A Datasheet Emitter common (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CEO I 100mA C R 4.7k 1 EMG3 UMG3N (EMT5) (UMT5) SOT-25 llFeatures 1)Two DTC143T chips in a EMT or UMT or SMT package. FMG3A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG3 / UMG3N FMG3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG3 1616 T2R 180 8 8000 G3 (EMT5) SOT-353 UMG3N 2021 TR 180 8 3000 G3 (UMT5) SOT-25 FMG3A 2928 T148 180 8 3000 G3 (SMT5) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG3 / UMG3N / FMG3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMG3 150 D *1*2 P Power dissipation UMG3N 150 mW/Total D *1*3 FMG3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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