EMG4 / UMG4N / FMG4A Datasheet Emitter common(dual digital transistors) llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CEO I 100mA C R 10k 1 EMG4 UMG4N (EMT5) (UMT5) SOT-25 llFeatures 1)Two DTC114T chips in a EMT or UMT or SMT package. FMG4A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG4 / UMG4N FMG4A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG4 1616 T2R 180 8 8000 G4 (EMT5) SOT-353 UMG4N 2021 TR 180 8 3000 G4 (UMT5) SOT-25 FMG4A 2928 T148 180 8 3000 G4 (SMT5) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG4 / UMG4N / FMG4A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMG4 150 D *1*2 P Power dissipation UMG4N 150 mW/Total D *1*3 FMG4A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002