UMG5NTR ROHM

UMG5NTR electronic component of ROHM
UMG5NTR ROHM
UMG5NTR Bipolar Transistors - Pre-Biased
UMG5NTR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UMG5NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMG5NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. UMG5NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Datasheet: UMG5NTR Datasheet (PDF)
Price (USD)
1: USD 0.4325 ea
Line Total: USD 0.43 
Availability : 7971
  
Ship by Wed. 26 Nov to Fri. 28 Nov
QtyUnit Price
1$ 0.4325
10$ 0.2662
100$ 0.1608
500$ 0.1122
1000$ 0.099
3000$ 0.0781
6000$ 0.0781
9000$ 0.066
24000$ 0.0638

Availability 29
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2546
50$ 0.1976
150$ 0.1299
500$ 0.0964
3000$ 0.0872
6000$ 0.0816


Availability 7971
Ship by Wed. 26 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4325
10$ 0.2662
100$ 0.1608
500$ 0.1122
1000$ 0.099
3000$ 0.0781
6000$ 0.0781
9000$ 0.066
24000$ 0.0638


Availability 172948
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 812
Multiples : 1
QtyUnit Price
812$ 0.5112


Availability 2269
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1424
Multiples : 1
QtyUnit Price
1424$ 0.1826
1472$ 0.1767

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMG5NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMG5NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMG5 / UMG5N Emitter common (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 10k 1 EMG5 UMG5N R (EMT5) (UMT5) 47k 2 llFeatures llInner circuit 1)Two DTC114Y chips in a EMT or UMT package 2)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG5 1616 T2R 180 8 8000 G5 (EMT5) SOT-353 UMG5N 2021 TR 180 8 3000 G5 (UMT5) www.rohm.com 1/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG5 / UMG5N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -6 to 40 V IN I Output current 70 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG5 150 D Power dissipation mW/Total *2*3 P UMG5N 150 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 1mA 1.4 - - I(on) O O V I = 5mA, I = 0.25mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 5mA DC current gain 68 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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