UMZ6.8ENTR ROHM

Zener diode UMZ6.8EN z Application z Dimensions (Unit : mm) z Lead size figure (Unit : mm) Voltage regulation (Anode common twin type) z Features 1) Small mold type. (UMD5) 2) High reliability. z Structure Silicon epitaxial planer z Structure z Taping dimensions (Unit : mm) z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation (*1) Pm200W Junction temperature 150 Tj C Storage temperature -55 to +150 Tstg C (*1) Total of 2 elements z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 6.47 - 7.14 V I =5mA Z Z Reverse current I - - 0.50 A V =3.5V R R Dynamic impedance Z -- 40 I =5mA Z Z www.rohm.com 2009.12 - Rev.D 1/2 2009 ROHM Co., Ltd. All rights reserved. UMZ6.8EN Data Sheet z Electrical characteristics curves Ta=150C Ta=125C 10 100 100 f=1MH 10 Ta=75C Ta=75C 1 1 Ta=25C Ta=125C 0.1 Ta=25C 10 Ta=-25C Ta=150C 0.01 0.1 Ta=-25C 0.001 0.0001 0.01 1 0.00001 0123456 6 6.5 7 7.5 8 01234 ZENER VOLTAGE : Vz(V) REVERSE VOLTAGE : V (V) R REVERSE VOLTAGE : V (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS R 0.2 7.2 20 0.18 Ta=25C Ta=25C Ta=25C 19.5 V =3.5V f=1MHz IZ=5mA R 0.16 7.1 19 n=30pcs V =0V n=30pcs R 0.14 18.5 n=10pcs AVE:19.06pF 7 0.12 18 0.1 17.5 17 6.9 0.08 16.5 0.06 16 6.8 0.04 AVE:0.0143nA AVE:6.954V 15.5 0.02 15 6.7 0 Ct DISRESION MAP Vz DISRESION MAP I DISRESION MAP R 1000 100 Rth(j-a) 100 Rth(j-c) 10 Mounted on epoxy board IM=10mA IF=100mA 10 1ms time 300us 1 1 0.1 1 10 0.001 0.1 10 1000 ZENER CURRENT(mA) TIME:t(s) Zz-Iz CHARACTERISTICS Rth-t CHARACTERISTICS www.rohm.com 2009.12 - Rev.D 2009 ROHM Co., Ltd. All rights reserved. 2/2 ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz( ) TRANSIENT REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)