Product Information

UMZC6.8NFHT106

UMZC6.8NFHT106 electronic component of ROHM

Datasheet
Zener Diodes ZENER DIODE
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

349: USD 0.1171 ea
Line Total: USD 40.87

339 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 349  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2876 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.4794
10 : USD 0.3755
100 : USD 0.233
500 : USD 0.2161
1000 : USD 0.157
3000 : USD 0.1365
9000 : USD 0.128
24000 : USD 0.128
45000 : USD 0.1232

Read More Specifications

     
Manufacturer
Product Category
Vz - Zener Voltage
Zener Current
Pd - Power Dissipation
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Qualification
Hts Code
LoadingGif

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified ESD Protection Diode UMZC6.8NFH UMZC6.8NFH Applications Dimensions Unit : mm Land size figure(Unit : mm) ESD Protection 1.3 (common anode configuration) 2.0 0.2 0 .3 0.1 Each lead has same dimension 0 .1 5 0. 05 Features 0.65 ( 3) 1) Small mold type. (UMD3) 2) High reliability 0.8MIN. UMD3 0 0.1 ( 2 ) ( 1 ) 0. 65 0. 65 Construction Structure 0 . 7 0 . 1 1 . 3 0. 1 Silicon epitaxial planar 0 . 9 0 . 1 ROHM : UMD3 JEDEC :S0T-323 JEITA : SC-70 week code Taping specificationsUnit : mm 1.550.05 4.00.1 2.00.05 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation 200 P ()mW Junction temperature T 150 C j Storage temperature Tstg -55 to +150 C Electrical characteristic (Ta=25C)( Rating of per diode) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 6.47 - 7.14 V I =5mA Z Z Reverse current I - - 0.50 A V =3.5V R R Capacitance between terminals V =0V , f=1MHz Ct - 3 - pF R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.02 - Rev.A 1/2 1 .2 5 0 .1 2 . 1 0 . 1 0 . 1 M i n 2.40.1 0.9MIN. 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6UMZC6.8NFH Data Sheet Electrical characteristic curves Ta=150 Ta=125 10 10 100 f=1MHz Ta=75 10 Ta=25 Ta=75 1 1 Ta=125 0.1 Ta=-25 1 Ta=25 Ta=150 0.01 0.1 Ta=-25 0.001 0.0001 0.1 0.01 0.00001 0 0.5 1 1.5 2 2.5 3 3.5 4 6 6.5 7 7.5 8 01234 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 7 0.2 10 Ta=25 Ta=25 0.18 Ta=25 9 IZ=5mA VR=3.5V f=1MHz 6.9 0.16 8 n=30pcs n=30pcs VR=0V 0.14 7 n=10pcs 6.8 0.12 6 0.1 5 AVE:3.10pF AVE:6.830V 0.08 4 6.7 3 0.06 AVE:0.0143nA 0.04 2 6.6 0.02 1 0 0 6.5 Ct DISRESION MAP Vz DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) Rth(j-c) 100 10 Mounted on epoxy board IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.02 - Rev.A ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() REVERSE CURRENT:IR (nA) TRANSIENT REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE TERMINALS:Ct(pF) BETWEENTERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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