X-On Electronics has gained recognition as a prominent supplier of UMZC6.8NT106 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. UMZC6.8NT106 ESD Suppressors / TVS Diodes are a product manufactured by ROHM. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

UMZC6.8NT106 ROHM

UMZC6.8NT106 electronic component of ROHM
UMZC6.8NT106 ROHM
UMZC6.8NT106 ESD Suppressors / TVS Diodes
UMZC6.8NT106  Circuit Protection

Images are for reference only
See Product Specifications
Part No. UMZC6.8NT106
Manufacturer: ROHM
Category: ESD Suppressors / TVS Diodes
Description: ROHM Semiconductor TVS Diode Arrays DIODES; ZENER; LO-CAPACITANCE
Datasheet: UMZC6.8NT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3913 ea
Line Total: USD 0.39 
Availability - 1055
Ship by Wed. 07 May to Fri. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24
Ship by Fri. 16 May to Wed. 21 May
MOQ : 5
Multiples : 5
5 : USD 0.2816
50 : USD 0.2206
150 : USD 0.1458
500 : USD 0.1092
3000 : USD 0.0994
6000 : USD 0.0934

1055
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.3913
10 : USD 0.26
100 : USD 0.1704
500 : USD 0.1254
1000 : USD 0.1144
3000 : USD 0.0935
6000 : USD 0.0891
9000 : USD 0.088
24000 : USD 0.0836

15044
Ship by Fri. 09 May to Thu. 15 May
MOQ : 1160
Multiples : 1
1160 : USD 0.2241
1203 : USD 0.2161
1244 : USD 0.209
2500 : USD 0.195
5000 : USD 0.1898
10000 : USD 0.1851

15254
Ship by Fri. 09 May to Thu. 15 May
MOQ : 847
Multiples : 1
847 : USD 0.3068
1136 : USD 0.2288
1258 : USD 0.2067
2000 : USD 0.1885
3000 : USD 0.1537
6000 : USD 0.14
12000 : USD 0.13

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
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We are delighted to provide the UMZC6.8NT106 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMZC6.8NT106 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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Data Sheet ESD Protection Diode UMZC6.8N Applications Dimensions Unit : mm Land size figure(Unit : mm) ESD Protection 1.3 (common anode configuration) 2.0 0.2 0.3 0.1 Each lead has same dimension 0.15 0.05 Features 0.65 (3) 1) Small mold type. (UMD3) 2) High reliability 0.8MIN. UMD3 0 0.1 (2 ) (1 ) 0.65 0.65 Construction Structure 0. 7 0 .1 1. 3 0. 1 Silicon epitaxial planar 0. 9 0 .1 ROHM : UMD3 JEDEC :S0T-323 JEITA : SC-70 week code Taping specificationsUnit : mm 1.550.05 2.00.05 4.00.1 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation P ()m200 W Junction temperature T 150 C j Storage temperature -55 to +150 Tstg C Electrical characteristic (Ta=25C)( Rating of per diode) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 6.47 - 7.14 V I =5mA Z Z Reverse current I - - 0.50 A V =3.5V R R Capacitance between terminals Ct - 3 - pF V =0V , f=1MHz R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.02 - Rev.A 1/2 1.250.1 2. 1 0 .1 0. 1M in 2.40.1 0.9MIN. 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6UMZC6.8N Data Sheet Electrical characteristic curves Ta=150 Ta=125 10 10 100 f=1MHz Ta=75 10 Ta=25 Ta=75 1 1 Ta=125 0.1 Ta=-25 1 Ta=25 Ta=150 0.01 0.1 Ta=-25 0.001 0.0001 0.1 0.01 0.00001 0 0.5 1 1.5 2 2.5 3 3.5 4 6 6.5 7 7.5 8 01234 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 7 0.2 10 Ta=25 Ta=25 0.18 Ta=25 9 IZ=5mA VR=3.5V f=1MHz 6.9 0.16 8 n=30pcs n=30pcs VR=0V 0.14 7 n=10pcs 6.8 0.12 6 0.1 5 AVE:3.10pF AVE:6.830V 0.08 4 6.7 3 0.06 AVE:0.0143nA 0.04 2 6.6 0.02 1 0 0 6.5 Ct DISRESION MAP Vz DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) Rth(j-c) 100 10 Mounted on epoxy board IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.02 - Rev.A ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() REVERSE CURRENT:IR (nA) TRANSIENT REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE TERMINALS:Ct(pF) BETWEENTERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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