Product Information

CL10B104MO8NNND

CL10B104MO8NNND electronic component of Samsung

Datasheet
CL10B104MO8NNND
10" Samsung tablet with 2GB of RAM and 8GB of internal storage.
Manufacturer: Samsung
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0036 ea
Line Total: USD 36

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10000
Multiples : 10000
10000 : USD 0.0036
30000 : USD 0.0034
50000 : USD 0.0034
200000 : USD 0.0034
300000 : USD 0.0034

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May


Multiples : 10000

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 40000
Multiples : 10000
40000 : USD 0.0041

Read More Specifications

     
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Product Category
RoHS - XON
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Additional Infomation About Product

CL10B104MO8NNND is an 8 GB DDR3L (low voltage) memory module manufactured by Samsung. It has 204-pin SO-DIMM form factor and operates at a frequency of 1600 MHz. The module requires 1.35 V and has a CAS latency of 10. It is a cost-effective solution for increasing the RAM of a laptop or notebook.

HS Compliance

Tariff Desc

8532.24.00 43 no --Ceramic dielectric, multilayer Free

ELECTRICAL CAPACITORS, FIXED, VARIABLE OR ADJUSTABLE (PRE-SET)

Samsung may also be referenced as

SAMSUNG
Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
SMP

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