K4T51163QQ-BCE6000 Samsung

K4T51163QQ-BCE6000 electronic component of Samsung Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of K4T51163QQ-BCE6000 DRAM across the USA, India, Europe, Australia, and various other global locations. K4T51163QQ-BCE6000 DRAM are a product manufactured by Samsung. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. K4T51163QQ-BCE6000
Manufacturer: Samsung
Category: DRAM
Description: 512MB Q-DIE DDR2 SDRAM
Datasheet: K4T51163QQ-BCE6000 Datasheet (PDF)
Price (USD)
20: USD 1.6863 ea
Line Total: USD 33.73 
Availability : 0
  
QtyUnit Price
20$ 1.6863

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 20
Multiples : 1
QtyUnit Price
20$ 1.6863

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the K4T51163QQ-BCE6000 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the K4T51163QQ-BCE6000 and other electronic components in the DRAM category and beyond.

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Rev. 1.0, Feb. 2014 K4T51083QQ K4T51163QQ 512Mb Q-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on anAS I basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other- wise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. 2014 Samsung Electronics Co., Ltd. All rights reserved. - 1 -Rev. 1.0 K4T51083QQ K4T51163QQ datasheet DDR2 SDRAM Revision History Revision No. History Draft Date Remark Editor 1.0 - First SPEC. Release. Feb. 2014 - S.H.Kim - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
SMP
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