Product Information

2SB1383

2SB1383 electronic component of Sanken

Datasheet
Bipolar (BJT) Transistor PNP - Darlington 120 V 25 A 50MHz 120 W Through Hole TO-3P

Manufacturer: Sanken
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.0182 ea
Line Total: USD 7.02

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

2SB1383
Sanken

1 : USD 7.0182

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

2SB1383
Sanken

1 : USD 8.6798
3 : USD 6.3725
7 : USD 6.0247
25 : USD 5.9686

     
Manufacturer
Product Category
Kind Of Transistor
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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1ms With Infinite heatsink 10ms DC Typ 1.5mA 1.0mA IB=0.6mA (2k) (80) E B Darlington 2SB1383 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application : Chopper Regulator, DC Motor Driver and General Purpose External Dimensions MT-100(TO3P) n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) Symbol Ratings Conditions Ratings Unit Symbol Unit 0.2 4.8 15.60.4 120 2.00.1 VCBO V ICBO VCB=120V 10max m A 9.6 VCEO 120 IEBO VEB=6V 10max mA V VEBO 6 120min V V(BR)CEO IC=25mA V a 0.1 3.2 IC 25(Pulse40) hFE VCE=4V, IC=12A 2000min A b IB 2 IC=12A, IB=24mA 1.8max A VCE(sat) V PC 120(Tc=25C) VBE(sat) IC=12A, IB=24mA 2.5max V W 2 Tj 150 fT VCE=12V, IE=1A 50typ MHz C 3 +0.2 +0.2 Tstg 230typ 55 to +150 COB VCB=10V, f=1MHz pF 1.05 0.65 C -0.1 -0.1 5.450.1 5.450.1 1.4 n Typical Switching Characteristics (Common Emitter) BEC VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. 24 2 12 10 5 24 24 1.0typ 3.0typ 1.0typ b. Lot No. I CVCE Characteristics (Typical) VCE(sat)IB Characteristics (Typical) I CVBE Temperature Characteristics (Typical) (VCE=4V) 25 3 25 20 20 I C=25A 2 15 15 12A 10 10 1 6A 5 5 0 0 0 0 1 2 3 4 5 6 0.5 1 10 100 500 0 1 2 2.6 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=4V) (VCE=4V) 2 20000 20000 10000 10000 1 5000 5000 0.5 1000 1000 500 500 200 200 0.1 0.2 0.5 1 5 10 40 0.2 0.5 1 5 10 40 1 10 100 1000 Collector Current I C(A) Collector Current I C(A) Time t(ms) f T IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc Ta Derating (VCE=12V) 120 60 100 50 50 100 40 10 5 30 50 20 1 10 Without Heatsink 0.5 Natural Cooling Without Heatsink 3.5 0.2 0 0 3 5 10 50 100 200 0.1 0.5 1 5 10 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 45 Typ 2.5mA 4.0mA 6.0mA 30C 25C 125C 8.0mA 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Collector Current I C(A) Cut-off Frequency f T(MH Z) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 20.0min 19.90.3 4.0max 4.0 2.0 1.8 5.00.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Sanken Elec
Sanken Electric
Sanken Electric Company, Ltd.

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