INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/251T completed by 25 September 2015. 25 June 2015 SUPERSEDING MIL-PRF-19500/251R 12 May 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, AND 2N2219, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL- PRF-19500. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Package outlines. The device packages for the encapsulated device types are as follows: TO-39 and TO-5 in accordance with figure 1 1.3 Maximum ratings unless otherwise specified T = +25 C. A Types T STG P P V V V I R R T T CBO CEO EBO C JC JA and T J max max T = +25C T = +25C A C (2) (2) (1) (1) W W V dc V dc V dc mA dc For all C/W C/W 2N2218, 2N2219 0.8 3.0 60 30 5 800 -65 to 50 195 2N2218A, 2N2219A 0.8 3.0 75 50 6 800 50 195 +200C 2N2218AL, 2N2219AL 0.8 3.0 75 50 6 800 50 195 (1) See derating curve, figures 2 and 3. (2) For thermal impedance curves, see figures 4 and 5. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/251T 1.4 Primary electrical characteristics. Types h at V = 10 V dc FE CE h h h h (1) h (1) FE1 FE2 FE3 FE4 FE5 I = 100 A dc I = 1.0 mA dc I = 10 mA dc I = 150 mA dc I = 500 mA dc C C C C C Min Max Min Max Min Max Min Max Min Max 2N2218 20 25 150 35 40 120 20 2N2219 35 50 325 75 100 300 30 2N2218A 30 35 150 40 40 120 20 2N2219A 50 75 325 100 100 300 30 2N2218AL 30 35 150 40 40 120 20 2N2219AL 50 75 325 100 100 300 30 Switching h C fe obo Types I = 20 mA dc I = 0, V = 10 V dc t t C E CE on off V = 20 V dc 100 kHz f 1 MHz CE f = 100 MHz pF ns ns Min Max Min Max Min Max Min Max 2N2218 2.5 12.0 8 40 250 2N2219 2.5 12.0 8 40 250 2N2218A 2.5 12.0 8 35 300 2N2219A 2.5 12.0 8 35 300 2N2218AL 2.5 12.0 8 35 300 2N2219AL 2.5 12.0 8 35 300 V (1) V (1) V (1) V (1) BE(sat)2 CE(sat)1 CE(sat)2 BE(sat)1 Types I = 500 mA dc I = 150 mA dc I = 500 mA dc I = 150 mA dc C C C C I = 50 mA dc I = 15 mA dc I = 50 mA dc I = 15 mA dc B B B B V dc V dc V dc V dc min max min max min max min max 2N2218 0.4 1.6 0.6 1.3 2.6 2N2219 0.4 1.6 0.6 1.3 2.6 2N2218A 0.3 1.0 0.6 1.2 2.0 2N2219A 0.3 1.0 0.6 1.2 2.0 2N2218AL 0.3 1.0 0.6 1.2 2.0 2N2219AL 0.3 1.0 0.6 1.2 2.0 (1) Pulsed (see 4.5.1). 2