X-On Electronics has gained recognition as a prominent supplier of JANSR2N3700UB bipolar transistors - pre-biased across the USA, India, Europe, Australia, and various other global locations. JANSR2N3700UB bipolar transistors - pre-biased are a product manufactured by Semicoa. We provide cost-effective solutions for bipolar transistors - pre-biased, ensuring timely deliveries around the world.

JANSR2N3700UB Semicoa

JANSR2N3700UB electronic component of Semicoa
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See Product Specifications
Part No.JANSR2N3700UB
Manufacturer: Semicoa
Category:Bipolar Transistors - Pre-Biased
Description: Trans GP BJT NPN 80V 1A 3-Pin CSOT-23
Datasheet: JANSR2N3700UB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 73.2798 ea
Line Total: USD 3663.99

Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 50
Multiples : 1
50 : USD 73.814
100 : USD 73.073
500 : USD 70.98
1000 : USD 67.457
2500 : USD 65

0 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 110.1777

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Brand
Collector Current Dc
Collector-Emitter Voltage
Pin Count
Emitter-Base Voltage
Operating Temp Range
Dc Current Gain
Collector-Base Voltage
Power Dissipation
Operating Temperature Classification
Rad Hardened
Category
Package Type
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We are delighted to provide the JANSR2N3700UB from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANSR2N3700UB and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/391P completed by 26 September 2015. 26 June 2015 SUPERSEDING MIL-PRF-19500/391N 20 May 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, LOW-POWER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, DEVICE TYPES 2N3019, 2N3057A, AND 2N3700, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device types 2N3019 and 2N3700. Radiation hardness assurance (RHA) level designators M, D, P, L, R, F, G and H are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Package outlines and die topography. The device packages for the encapsulated device types are as follows: TO-5 in accordance with figure 1, TO-39 in accordance with figure 2, TO-18 in accordance with figure 3, and surface mount versions UB in accordance with figure 4. The dimensions and topography for JANHC and JANKC unencapsulated die are as follows: A version die in accordance with figure 5, B version die in accordance with figure 6, and C version die in accordance with figure 7. 1.3 Maximum ratings. Unless otherwise specified, T = +25C. A I V V V T and T C CBO EBO CEO J STG A dc V dc V dc V dc C 1 140 7 80 -65 to +200 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/391P 1.3 Maximum ratings. Unless otherwise specified, T = +25C. - Continued. A Types P P P R R R T T T JA JC JSP(IS) T = +25C (2) (3) (4) (2) (3) (2) (3) T = +25C T = +25C SP(IS) A C (1) (2) (1) (2) (1) (2) W W W C/W C/W C/W 2N3019 0.800 5 N/A 195 30 N/A 2N3019S 0.800 5 N/A 195 30 N/A 2N3057A 0.500 1.8 N/A 325 80 N/A 2N3700 0.500 1 N/A 325 150 N/A 2N3700UB 0.500 N/A 1.5 325 N/A 90 (1) For derating, see figures 8, 9, 10, 11, 12, and 13. (2) See 3.3. (3) For thermal curves, see figures 14, 15, 16, 17, 18, 19, and 20. (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 8 and . 12 for the UB package and use R JA 1.4 Primary electrical characteristics. Limits h h h (1) h (1) FE1 FE2 FE4 FE3 V = 10 V dc V = 10 V dc V = 10 V dc V = 10 V dc CE CE CE CE I = 150 mA dc I = 0.1 mA dc I = 10 mA dc I = 500 mA dc C C C C Min 100 50 90 50 Max 300 300 300 Types Limit C obo h (1) |h | FE5 fe 100 kHz f 1 MHz f = 20 MHz V = 10 V dc CE = 10 V dc V = 10 V dc VCB CE I = 1 A dc C I = 0 I = 50 mA dc E C 2N3019, 2N3019S pF 2N3057A, 2N3700 2N3700UB Min 15 5 Max 20 12 Types Limits VCE(sat)1 (1) VCE(sat)2 (1) VBE(sat) (1) I = 150 mA dc I = 500 mA dc I = 150 mA dc C C C I = 15 mA dc I = 50 mA dc I = 15 mA dc B B B 2N3019, 2N3019S V dc V dc V dc 2N3057A, 2N3700 2N3700UB Min Max 0.2 0.5 1.1 (1) Pulsed, see 4.5.1. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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