JANTX2N6193 Semicoa

JANTX2N6193 electronic component of Semicoa
JANTX2N6193 Semicoa
JANTX2N6193 Bipolar Transistors - BJT
JANTX2N6193  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JANTX2N6193 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANTX2N6193 Bipolar Transistors - BJT are a product manufactured by Semicoa. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. JANTX2N6193
Manufacturer: Semicoa
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39
Datasheet: JANTX2N6193 Datasheet (PDF)
Price (USD)
100: USD 14.3417 ea
Line Total: USD 1434.17 
Availability : 0
  
QtyUnit Price
100$ 14.3417
250$ 14.1986
500$ 14.0569
1000$ 14.0175

Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 14.3417
250$ 14.1986
500$ 14.0569
1000$ 14.0175


Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 26.5198
10$ 14.9423
25$ 14.6435

   
Manufacturer
Product Category
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We are delighted to provide the JANTX2N6193 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N6193 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 Devices Qualified Level JAN, JANTX 2N6193 JANTXV MAXIMUM RATINGS Ratings Symbol 2N6193 Units - Emitter Voltage 100 V CEO - 100 V C Emitter - 6.0 V EBO 5.0 I C Base Current 1.0 I B 0 Total Power Dissipation T = +25 C 1.0 W A P 0 T T = +25 C 10 W C 0 Operating & Storage Temperature Range - 65 to +200 C T T o p , TO - 39* THERMAL CHARACTERISTICS (TO - Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction - - Case 17.5 R 0 0 1) Derate linearly 5.71mW/ > +25 A 0 0 2) Derate linearly 57.1mW/ > +25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Sustaining Voltage V 100 I C - Emitter Cuto ff Current I 100 CEO V = 100 Vdc CE Emitter - I 100 EBO V = 6.0 Vdc EB - Emitter Cutoff Current 10 I CEX V = 90 Vdc, V = 1.5 Vdc CE BE - I 10 c V = 100 Vdc 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page CB CBO Ad Base Cutoff Current Collector Adc Collector Adc Base Cutoff Current Adc Collector = 50 mAdc CEO(sus) Vdc Collector package outline *See appendix A for C C for T C C for T JC C/W to 205AD) stg (2) (1) Adc Adc Collector Current Vdc Base Voltage BO Vdc Base Voltage Collector Vdc Collector 2N6193 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS DC Current Gain 60 I = 2.0 Vdc C CE h FE 60 240 I = 2.0 Vdc C CE 40 I = 2.0 Vdc C CE - Emitter Saturation Voltage 0.7 I V C B CE(sat) 1.2 I B Base - Emitter Saturation Voltage 1.2 I V C B BE(sat) 1.8 I B DYNAMIC CHARACTERISTICS - Signal Short Circuit - Current Transfe r Ratio 3.0 15 h I = 10 Vdc, f = 10 MHz C CE Output Capacitance C 300 obo V = 0, 100 kHz 1.0 MHz E Output Capacitance 1250 C ibo V = 0, 100 kHz 1.0 MHz BE C SWITCHING CHARACTERISTICS t 100 s V = - = 3.0 d CC t Rise Time 100 I = r s C B1 t 2.0 s V = - s CC C t Fall Time 200 I = - I = f s B1 B2 SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t 0.5 s C Test 1 V CE C Test 2 V CE C (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 12010 1 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle = 55 mAdc = 90 Vdc, I = 5.0 Adc = 2.0 Vdc, I 0.2 Adc = 2.0 Adc, 40 Vdc I Storage Time 0.2 Adc = 2.0 Adc, I BE(off) Vdc 40 Vdc, V lay Time De f = 2.0 Vdc, I pF CB f = 10 Vdc, I pF = 0.5 Adc, V fe Forward Magnitude of Common Emitter Small C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I Collector = 5.0 Adc, V = 2.0 Adc, V = 0.5 Adc, V

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