2N6724 2N6725 www.centralsemi.com SILICON DESCRIPTION: NPN DARLINGTON The CENTRAL SEMICONDUCTOR 2N6724 and POWER TRANSISTORS 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N6724 2N6725 UNITS Collector-Base Voltage V 50 60 V CBO Collector-Emitter Voltage V 40 50 V CEO Emitter-Base Voltage V 12 V EBO Continuous Collector Current I 2.0 A C Continuous Base Current I 0.5 A B Power Dissipation (T=25C) P 2.0 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 62.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C) 2N6724 2N6725 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=30V - 100 - - nA CBO CB I V=40V - - - 100 nA CBO CB I V =10V - 100 - 100 nA EBO EB BV I=1.0A 50 - 60 - V CBO C BV I=1.0mA 40 - 50 - V CES C BV I=10A 12 - 12 - V EBO E V I =1.0A, I=2.0mA - 1.5 - 1.5 V CE(SAT) C B V V =5.0V, I=1.0A - 2.0 - 2.0 V BE(ON) CE C h V =5.0V, I=200mA 25K - 25K - FE CE C h V =5.0V, I=1.0A 4K 40K 4K 40K FE CE C f V =5.0V, I =200mA, f=100MHz 100 1K 100 1K MHz T CE C C V =10V, I=0, f=1.0MHz - 10 - 10 pF ob CB E R1 (31-July 2013)2N6724 2N6725 SILICON NPN DARLINGTON POWER TRANSISTORS TO-237 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (31-July 2013) www.centralsemi.com