3N170 Semiconductors

3N170 electronic component of Semiconductors Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 3N170 across the USA, India, Europe, Australia, and various other global locations. 3N170 are a product manufactured by Semiconductors. We provide cost-effective solutions for 3N170, ensuring timely deliveries around the world.

Part No. 3N170
Manufacturer: Semiconductors
Category: Unclassified
Description: 3N170 semiconductors
NPN general purpose transistor; medium power/voltage; suitable for switching.
Datasheet:
Price (USD)
5: USD 20.0382 ea
Line Total: USD 100.19 
Availability : 0
  
QtyUnit Price
5$ 20.0382

Availability 0
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 20.0382

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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We are delighted to provide the 3N170 from our Semiconductors manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 3N170 and other electronic components in the Semiconductors manufacturer and beyond.

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1. 3N170 is a type of junction field-effect transistor (JFET) used for a variety of applications such as switching, amplifier, and oscillator circuits. 2. It features an N-channel field-effect depletion-mode and a PN junction gate structure. 3. It has superior frequency response, low noise, and is fabricated with high mobility Si, or 3N170H material.

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