Product Information

SKM 100GB176D

SKM 100GB176D electronic component of Semikron

Datasheet
IGBT half-bridge; Urmax:1.7kV; Ic:75A; Ifsm:150A; SEMITRANS2
Manufacturer: Semikron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 114.3566 ea
Line Total: USD 114.36

15 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SKM 100GB176D
Semikron

1 : USD 111.657

Read More Specifications

     
Manufacturer
Product Category
Case
Version
Mounting
Semiconductor Structure
Electrical Mounting
Topology
Type Of Module
Max Forward Impulse Current
Max Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

SKM 100GB176D Absolute Maximum Ratings Symbol Conditions Values Units IGBT SEMITRANS 2 Inverse Diode Trench IGBT Modules SKM 100GB176D Module Features Characteristics Symbol Conditions min. typ. max. Units IGBT Typical Applications* GB 1 28-06-2010 GIL by SEMIKRONSKM 100GB176D Characteristics Symbol Conditions min. typ. max. Units Inverse Diode SEMITRANS 2 Trench IGBT Modules Module SKM 100GB176D Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective Typical Applications* application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GB 2 28-06-2010 GIL by SEMIKRON

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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