RClamp0561PQ Femto Farad RailClamp 1-Line, 140fF ESD Protection PROTECTION PRODUCTS Description Features High ESD withstand voltage RClamp0561PQ is an ultra low capacitance ESD IEC 61000-4-2 (ESD) 18kV (air), 15kV (contact) protection device specifically designed to protect high- Low capacitance: 0.14pF Typical speed differential lines. It offers desirable characteristics Qualified to AEC-Q100 for board level protection including fast response time, Very small PCB area low operating and clamping voltage, and no device Protects one high-speed line degradation. Working voltage: 5.5V Typical dynamic resistance: 1.2 Large operating bandwidth: 16GHz RClamp0561PQ features extremely good ESD protection Solid-state silicon-avalanche technology characteristics highlighted by low peak ESD clamping voltage, and high ESD withstand voltage (+/-15kV Mechanical Characteristics contact per IEC 61000-4-2). RClamp0561PQ has a SLP1006P2 Package typical capacitance of 0.14pF allowing it to be used in Pb-Free, Halogen Free, RoHS/WEEE Compliant high bandwidth applications such as HDMI 2.0 4K/2K, Nominal Dimensions: 1.0 x 0.60 x 0.50 mm Thunderbolt, and USB 3.1. Each device will protect one Lead Finish: NiPdAu high-speed data line operating up to 5.5 volts. Marking : Marking Code Packaging : Tape and Reel RClamp0561PQ is in a 2-pin SLP1006P2 package Applications measuring 1.0 x 0.6 mm with a nominal height of 0.50mm. Leads are finished with NiPdAu. The small HDMI 1.4 and HDMI 2.0 package gives the designer the flexibility to protect USB 3.0 and USB 3.1 Automotive infotainment single lines in applications where arrays are not practical. USB Type-C Nominal Dimensions Schematic and Pin Configuration 1.0 12 0.60 0.65 0.50 1 Nominal Dimensions in mm RClamp0561PQ (Bottom View) RClamp0561PQ 1 www.semtech.com Final Datasheet Rev 3.1 Semtech July 19, 2017Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (t = 8/20s) P 40 W p PK Peak Pulse Current (t = 8/20s) I 2 A p PP (1) ESD per IEC 61000-4-2 (Air) 18 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 15 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O Reverse Stand-Off Voltage V -40 C to 125 C 5.5 V RWM O O Reverse Breakdown Voltage V I = 1mA -40 C to 125 C 6.5 9 10.5 V BR t O T = 25 C <10 50 nA Reverse Leakage Current I V = 5.5V R RWM O T = 125 C <10 150 nA Clamping Voltage V I = 2A, t = 8/20s 15.5 20 V C PP p 2 ESD Clamping Voltage V I = 4A, t = 0.2/100ns (TLP) 14.5 V C PP p 2 ESD Clamping Voltage V I = 16A, t = 0.2/100ns (TLP) 29 V C PP p 2, 3 Dynamic Resistance R t = 0.2/100ns (TLP) 1.2 Ohms DYN p O Junction Capacitance C V = 0V, f = 1MHz T = 25 C 0.14 0.18 pF J R Cutoff Frequency F -3dB 16 GHz C Notes: (1): ESD gun return path connected to Ground Reference Plane (GRP) (2): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns TLP TLP 1 2 (3): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp0561PQ 2 www.semtech.com Final Datasheet Rev 3.1 Semtech July 19, 2017