RClamp3521P
Ultra-Low Capacitance
1-Line, 3.5V ESD protection
PROTECTION PRODUCTS PRELIMINARY
PROTECTION PRODUCTS - RailClamp
Features
Description
Transient protection for data lines to
RClamp 3521P provides ESD protection for USB3.0
and other high-speed ports. It may be used to meet IEC 61000-4-2 (ESD) 17kV (air), 12kV (contact)
the ESD immunity requirements of IEC 61000-4-2. IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
RClamp3521P is designed to minimize both the ESD
Cable Discharge Event (CDE)
peak clamping and the TLP clamping. The dynamic
Ultra-small package (1.0 x 0.6 x 0.5mm)
resistance is minimized (0.47 Ohms typical) for opti-
Protects one data or I/O line
mum protection of sensitive circuits. Maximum capaci-
Low capacitance: 0.40pF
tance is only 0.40pF. This allows the RClamp3521P to
Dynamic Resistance: 0.47 Ohms Typical
be used in applications operating in excess of 5GHz
Low ESD clamping voltage
without appreciable signal attenuation. These devices
Operating voltage: 3.5V
are manufactured using Semtechs proprietary low
Solid-state silicon-avalanche technology
voltage technology for superior electrical characteritics.
Mechanical Characteristics
RClamp3521P is in a 2-pin SLP1006P2 package. It mea-
sures 1.0 x 0.6 x 0.5mm. Leads are spaced at a pitch of
SLP1006P2 package
0.65mm and are finished with lead-free NiPdAu. Each
Molding compound flammability rating: UL 94V-0
device will protect one line operating up to 3.5 volts.
Marking: Marking code
The combination of low peak ESD clamping, low dynamic
Packaging: Tape and Reel
resistance, and low capacitance makes this device suit-
Lead Finish: NiPdAu
able for applications such as USB 3.0, audio and V-By-
Pb-Free, Halogen Free, RoHS/WEEE Compliant
One interfaces in portable devices.
Applications
USB 2.0 / USB 3.0
V-By-One
Display Port
MHL / MDDI
LVDS Interfaces
eSATA Interfaces
Dimensions Schematic & Pin Configuration
1.0
2
0.60
0.65
1
0.50
Nominal Dimensions (mm) SLP1006P2 (Bottom View)
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Revision12/13/2013 1RClamp3521P
PROTECTION PRODUCTS PRELIMINARY
Absolute Maximum Rating
Rlating Seymbo Vsalu Unit
PPeak Pulse Power (tp = 8/20s) 5s0 Watt
pk
M)aximum Peak Pulse Current (tIp = 8/20s 4sAmp
pp
1
ESD per IEC 61000-4-2 (Air) V +/- 17 kV
ESD
1
ESD per IEC 61000-4-2 (Contact) +/- 12
OTperating Temperature -C40 to +125
J
STtorage Temperature -C55 to +150
STG
o
Electrical Characteristics (T=25 C)
Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit
RVeverse Stand-Off Voltage 3V.5
RWM
BVreakdown Voltage I=51mA 47. 65. 8V.
BR BR
RIeverse Leakage Current V=13.5V 05.0 0A.0
R RWM
CVlamping Voltage I=51A, tp = 8/20s 90. 1V
C PP
CVlamping Voltage I=54A, tp = 8/20s 130. 1V
C PP
2
ESD Clamping Voltage V I = 4A, 8V.8
C PP
tlp = 0.2/100ns
2
ESD Clamping Voltage V I = 16A, 1V4.5
C PP
tlp = 0.2/100ns
2
Trigger Voltage Vt8lp = 0.2/100ns V
TRIG
2, 3
Dynamic Resistance Rt7lp = 0.2 / 100ns 0s.4 Ohm
DYN
00.33 0F.4 p
JCunction Capacitance V = 0V, f = 1MHz
j R
Notes
1)ESD gun return path connected to ESD ground reference plane.
2)Transmission Line Pulse Test (TLP) Settings: t = 100ns, t = 0.2ns, I and V averaging window: t = 70ns to
p r TLP TLP 1
t = 90ns.
2
3) Dynamic resistance calculated from I = 4A to I = 16A
pp pp
4) Device is electrically symmetrical
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2013 Semtech Corporation 2