TClamp2472S Low Capacitance TransClamp Surge Protection for xDSL Interfaces PROTECTION PRODUCTS Description Features Transient Protec tion to TClamp2472S is specifically designed to provide IEC 61000-4-2 (ESD) Level 4 secondar y surge and ESD protec tion for Class-H VDSL2 IEC 61000-4-4 (EFT ) 2kV (5/50ns) line dr ivers. TClamp2472S integrates low capacitance, IEC 61000-4-5 (Lightning) 20A (8/20s) surge -rated steer ing diodes with a high power transient Bias diodes prevent charging of T VS capacitance voltage suppressor ( T VS). The T VS utilizes snap -back Wor k ing Voltage: 24V or crow-bar technology to minimize device clamping Low Capacitance: 3.5pF M aximum Capacitance var iation <1.5pF (1V to 24V ) voltage and features high surge cur rent capabilit y of 20A S olid-State Silicon-Avalanche Technology (tp=8/20us). Mechanical Characteristics TClamp2472S capacitance is limited to 3.5pF maximum JEDEC SOT-23 6L pack age with a t ypical capacitance var iation of 0.10pF over the Pb -Free, Halogen Free, R oHS/WEEE Compliant operating voltage range. This ensures cor rec t signal Lead Finish: matte Tin transmission on VDSL lines. The biased br idge struc ture M olding Compound Flammabilit y R ating: UL 94V-0 allows the device to be used in VDSL2 applications that M ar k ing : M ar k ing Code + Date Code utilize asymetr ical Class-H line dr ivers with operating Pack aging : Tape and R eel voltages up to 24Vp -p. Applications TClamp2472S is in a 6-pin SOT-23 pack age. The leads ADSLx / VDSLx S econdar y Protec tion are finished with lead-free matte tin. The flow- through VDSL2 Class-H Line Dr iver S econdar y Protec tion M odems pack age design simplifies PCB layout. Access Equipment Central O ffice Equipment Customer Premise Equipment Circuit Diagram Pin Configuration 5 6 Line 1A 1 5 - Bias 2 + Bias 1 3 4 Line 1B 3 2 TClamp2472S Page 1 www.semtech.com Final Datasheet Rev 2.1 Semtech November 18, 2015Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 1.2/50s) P 150 W PK Peak Pulse Cur rent (tp = 1.2/50s) I 20 A PP (1), (3) ESD per IEC 61000-4-2 (Contac t) V 8 kV ESD O Operating Temperature T -40 to +85 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O -40 C to 85 C R everse Stand- O ff Voltage V 24 V R WM Pin 1 to Pin 2, Pin 3 to Pin 2, Pin 1 to Pin 3 O O I = 10mA, T = -40 C to 85 C BR R everse Breakdown Voltage V 27 31 35 V BR Pin 1 to Pin 3 O T = 25 C 0.01 0.100 A R everse Leak age Cur rent I V = 24V R R WM O T = 85 C 0.02 0.100 A (3) Holding Cur rent I 50 200 mA H I = 10A, tp = 1.2/50s, 8/20s PP Combination Wavefor m 6 V Pin 1 to Pin 3 (2), (3) Clamping Voltage V C I = 20A, tp = 1.2/50s, 8/20s PP Combination Wavefor m 7.5 V Pin 1 to Pin 3 I = 50mA (3) BO Breakover Voltage V 35 V BO Pin 1 to Pin 3 V = 0V, f = 1MH z R 2 3.5 pF Pin 1 to 2 or Pin 3 to Pin 2 O Junc tion Capacitance C T = 25 C J V = 0V, f = 1MH z R 1.2 2 pF Pin 1 to Pin 3 Var iation in Junc tion V = 1V - 24V, f = 1MH z R DC 0.1 1.5 pF (3) J Capacitance Pin 1 to Pin 3 Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is defined as the peak voltage across the device after the device snaps back to a conducting state. (3): Guaranteed by design. Not production tested TClamp2472S Page 2 www.semtech.com Final Datasheet Rev 2.1 Semtech November 18, 2015