Product Information

UCLAMP0301PQTNT

UCLAMP0301PQTNT electronic component of Semtech

Datasheet
ESD Suppressors / TVS Diodes UCLAMP 1 LINE ESD PROTECTION

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9655 ea
Line Total: USD 0.97

8523 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7142 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.6835
10 : USD 0.6025
100 : USD 0.4275
500 : USD 0.3659
1000 : USD 0.2922
2500 : USD 0.291
5000 : USD 0.2826
10000 : USD 0.2741
20000 : USD 0.2717

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Clamp0301PQ Low Voltage Clamp for ESD and CDE Protection PROTECTION PRODUCTS - Clamp Description Features u Transient protection for data lines to The Clamp TVS diodes are designed for automobile IEC 61000-4-2 (ESD) applications and quali ed to AEC-Q100 Grade3. They IEC 61000-4-4 (EFT) offer superior electrical characteristics such as lower Cable Discharge Event (CDE) clamping voltage and no device degradation when u Ultra-small package compared to other technologies. They are designed to u Protects one data line protect sensitive semiconductor components from dam- u Low clamping voltage age or upset due to electrostatic discharge (ESD), light- u Working voltage: 3.0V ning, electrical fast transients (EFT), and cable discharge u Low leakage current events (CDE). u Solid-state silicon-avalanche technology The Clamp 0301PQ is constructed using Semtechs u AEC-Q100 Grade 3 Quali ed proprietary EPD process technology. The EPD process provides low standoff voltages with signi cant reduc- Mechanical Characteristics tions in leakage currents and capacitance over silicon- u SLP1006P2 package avalanche diode processes. They feature a true oper- u Pb-Free, Halogen Free, RoHS/WEEE Compliant ating voltage of 3.0 volts for superior protection when u Nominal Dimensions: 1.0 x 0.6 x 0.5 mm compared to traditional pn junction devices. u Lead Finish: NiPdAu The Clamp0301PQ is in a 2-pin SLP1006P2 package u Molding compound ammability rating: UL 94V-0 measuring 1.0 x 0.6 x 0.5mm. The leads are spaced at u Marking: Marking code, cathode band a pitch of 0.65mm and are nished with lead-free u Packaging: Tape and Reel NiPdAu. Each device will protect one line operating at 3.0 volts. It gives the designer the exibility to protect Applications single lines in applications where arrays are not practi- u Automobile Applications cal. They may be used to meet the ESD immunity re- u Cellular Handsets & Accessories quirements of IEC 61000-4-2, Level 4 (15kV air, 8kV u Notebooks & Handhelds contact discharge) and above. The combination of small u Portable Instrumentation size and high ESD surge capability makes them ideal for u Digital Cameras use in automobile applications. The Clamp0301PQ is u Peripherals quali ed to AEC-Q100 Grade 3. u MP3 Players Package Dimensions Schematic & Pin Con guration www.semtech.com 9/29/2014 1Clamp0301PQ PROTECTION PRODUCTS Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 40 W PK Peak Pulse Current (tp = 8/20s) I 5 A PP (1) ESD per IEC 61000-4-2 (Air) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 25 O Operating Temperature T -40 to +85 C J O Storage Temperature T -55 to +150 C STG Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) O Electrical Characteristics (T=25 C unless otherwise speci ed) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V 3.0 V RWM Punch-Through Voltage V I = 2A 3.1 3.9 4.6 V PT PT Snap-Back Voltage V I = 50mA 2.8 SB SB Reverse Leakage Current I V = 3.0V 0.05 0.5 A R RWM Clamping Voltage V I = 1A, tp = 8/20s 5.5 V C PP Clamping Voltage V I = 5A, tp = 8/20s 8.0 V C PP Reverse Clamping Voltage V I = 1A, tp = 8/20s 2.4 V CR PP V = 0V 25 30 I/O pin to GND R Junction Capacitance C pF J f = 1MHz V = 3.0V 18 R www.semtech.com 2014 Semtech Corporation. 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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