Clamp1211Z Ultra Small Clamp 1 Line, 12V ESD Protection PROTECTION PRODUCTS Description Features High ESD withstand Voltage: +/-30kV (Contact/Air) per Clamp TVS diodes are designed to protect sensitive IEC 61000-4-2 electronics from damage or latch-up due to ESD. They Able to withstand over 1000 ESD strikes per IEC61000- features large cross-sectional area junctions for 4-2 Level 4 conducting high transient currents. These devices offer Ultra-small 0201 package desirable characteristics for board level protection Protects one data line or power line Low leakage current: <50nA (V =12V) including fast response time, low operating and R Working voltage: +/-12V clamping voltage,and no device degradation. Low dynamic resistance: 0.30 (typ) Solid-state silicon-avalanche technology The Clamp1211Z is in a 2-pin SLP0603P2X3 package. It measures 0.6 x 0.3 mm with a nominal height Mechanical Characteristics of only 0.25mm. The leads are finished with lead-free NiAu. Each device will protect one line operating at SLP0603P2X3 package 12 volts. It gives the designer the flexibility to protect Pb-Free, Halogen Free, RoHS/WEEE compliant single lines in applications where arrays are not practical. Nominal Dimensions: 0.6 x 0.3 x 0.25 mm The combination of small size and high ESD surge Lead Finish: NiAu capability makes them ideal for use in portable Marking: Marking code + dot matrix date code Packaging: Tape and Reel applications such as cellular phones, digital cameras, and tablet PCs. Applications Cellular Handsets & Accessories Portable Instrumentation 12V Power Protection Tablet PC Package Dimension Schematic & Pin Configuration 0.620 0.220 0.320 1 0.160 0.355 BSC 2 0.250 SLP0603P2X3 (Bottom View) Nominal Dimensions (mm) Clamp1211Z 1 of 7 www.semtech.com Final Datasheet Rev 5.1 Semtech Revision date 2/22/2017Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 175 W PK Peak Pulse Current (tp = 8/20s) I 7 A PP (1) ESD per IEC 61000-4-2 (Air) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 30 O Operating Temperature T -55 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Pin1 to 2 or 2 to 1 12 V RWM Reverse Breakdown Voltage V I = 1mA, Pin 1 to 2 or 2 to 1 14.2 15.8 18 V BR t Reverse Leakage Current I V = 12V, Pin 1 to 2 or 2 to 1 <5 50 nA R RWM I =1A, tp = 8/20s, PP Clamping Voltage V 20 V C Pin1 to 2 or 2 to 1 I =7A, tp=8/20s pp Clamping Voltage V 25 V C Pin1 to 2 or 2 to 1 I = 4A 17.2 PP 2 ESD Clamping Voltage V t = 0.2/100ns V C p I = 16A 21 PP 2,3 Dynamic Resistance R t = 0.2/100ns 0.30 DYN p O Junction Capacitance C V = 0V, f = 1MHz T = 25 C 19 25 pF J R Notes 1) ESD gun return path connected to ESD ground plane. 2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t1 = 70ns to t2 = 90ns. TLP TLP 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP Clamp1211Z 2 of 7 www.semtech.com Final Datasheet Rev 5.1 Semtech Revision Date 2/22/2017