Product Information

UCLAMP3305P.TCT

UCLAMP3305P.TCT electronic component of Semtech

Datasheet
ESD Suppressors / TVS Diodes 3.3V ESD PROTECTION ARRAY

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3047 ea
Line Total: USD 1.3

3163 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2939 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.9382
10 : USD 0.8441
100 : USD 0.6725
500 : USD 0.5712
1000 : USD 0.4721
3000 : USD 0.4335
6000 : USD 0.4298
9000 : USD 0.4226

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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uClamp3305P Low Voltage TVS for ESD Protection TM PROTECTION PRODUCTS - MicroClampPROTECTION PRODUCTS Features Description TM The Clamp series of TVS arrays are designed to Transient protection for data lines to protect sensitive electronics from damage or latch-up IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) due to ESD, lightning, and other voltage-induced IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) transient events. Each device will protect up to four Small package for use in portable electronics lines operating at 3.3 volts. Protects five I/O lines Working voltage: 3.3V TM The Clamp 3305P is a solid-state device designed Low leakage current specifically for transient suppression. It is constructed Low operating and clamping voltages using Semtechs proprietary EPD process technology. Solid-state silicon-avalanche technology The EPD process provides low standoff voltages with significant reductions in leakage currents and capaci- Mechanical Characteristics tance over traditional pn junction processes. They offer SLP1616P6 package desirable characteristics for board level protection RoHS/WEEE Compliant including fast response time, low clamping voltage and no device degradation. Nominal Dimensions: 1.6 x 1.6 x 0.58 mm Lead Pitch: 0.5mm The Clamp3305P may be used to meet the immunity Lead Finish: NiPdAu requirements of IEC 61000-4-2, level 4 (15kV air, Marking : Orientation Mark and Marking Code 8kV contact discharge). It is packaged in an ultra Packaging : Tape and Reel small SLP1616P6 package with a low profile of only 0.58mm. The leads are spaced at a pitch of 0.5mm Applications and are finished with lead-free NiPdAu. The small Cellular handsets and accessories package makes it ideal for use in portable electronics Notebooks and handhelds such as cell phones, digital still cameras, and notebook MP3 Players computers. Digital cameras Portable instrumentation PDAs Circuit Diagram Package 1.6 1 6 3 4 5 1 1.6 6 0.5 0.6 Center Tab (GND) Device Schematic 6 Pin SLP package (Bottom Side View) 1.6 x 1.6 x 0.58mm (Nominal) www.semtech.com Revision 02/15/2008 1uClamp3305P PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 4s0 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 5sAmp pp ESD per IEC 61000-4-2 (Air) V +/- 20 kV PP ESD per IEC 61000-4-2 (Contact) +/- 15 OTperating Temperature -C55 to +125 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 3V.3 RWM PVunch-Through Voltage I=52A 39. 36. 4V. PT PT SVnap-Back Voltage I=850mA2V. SB SB RIeverse Leakage Current V=53.3V 05.0 0A. R RWM CVlamping Voltage I = 1A, tp = 8/20s 5V.5 C PP Any I/O to Gnd CVlamping Voltage I = 5A, tp = 8/20s 8V.0 C PP Any I/O to Gnd RVeverse Clamping Voltage I = 1A, tp = 8/20s 2V.4 CR PP Any I/O to Gnd I/O pin to Gnd 250 2Fp JCunction Capacitance V = 0V, f = 1MHz j R I/O pin to Gnd 1F2 p V = 3.3V, f = 1MHz R I/O pin to I/O pin 150 1F2. p V = 0V, f = 1MHz R I/O pin to I/O pi n 7F.5 p V = 3.3V, f = 1MHz R www.semtech.com 2008 Semtech Corp. 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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