Product Information

UCLAMP3311P

UCLAMP3311P electronic component of Semtech

Datasheet
DIODE, TVS, 3.3V, ESD/CDE SLP1006P2

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9912 ea
Line Total: USD 0.99

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

UCLAMP3311P
Semtech

1 : USD 0.9912
10 : USD 0.786
100 : USD 0.5727
500 : USD 0.4781
1000 : USD 0.4283

     
Manufacturer
Product Category
Packaging
Product Range
Tvs Polarity
Reverse Stand-Off Voltage Vrwm
Diode Case Style
No Of Pins
Breakdown Voltage Min
Breakdown Voltage Max
Clamping Voltage Vc Max
Peak Pulse Power Dissipation
Svhc
Peak Pulse Current Ippm
Power Dissipation Pd
LoadingGif

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uClamp3311P TM Low Voltage Clamp for ESD and CDE Protection TM PROTECTION PRODUCTS - MicroClampPROTECTION PRODUCTS Features Description TM The Clamp series of Transient Voltage Suppressors Transient protection for data lines to (TVS) are designed to replace multilayer varistors IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) (MLVs) in portable applications where low operating IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) voltage is vital. They offer superior electrical characteris- Cable Discharge Event (CDE) tics such as lower clamping voltage and no device Ultra-small package (1.0 x 0.6 x 0.5mm) degradation when compared to MLVs. They are de- Protects one data line signed to protect sensitive semiconductor components Low clamping voltage from damage or upset due to electrostatic discharge Working voltage: 3.3V (ESD), lightning, electrical fast transients (EFT), and Low leakage current cable discharge events (CDE). Solid-state silicon-avalanche technology TM The Clamp 3311P is constructed using Semtechs proprietary EPD process technology. The EPD process Mechanical Characteristics provides low standoff voltages with significant reduc- SLP1006P2 package tions in leakage currents and capacitance over silicon- RoHS/WEEE Compliant avalanche diode processes. They feature a true Nominal Dimensions: 1.0 x 0.6 x 0.5 mm operating voltage of 3.3 volts for superior protection Lead Finish: NiPdAu when compared to traditional pn junction devices. TM Molding compound flammability rating: UL 94V-0 The Clamp 3311P is in an 2-pin, RoHS/WEEE compli- Marking : Marking code, cathode band ant, SLP1006P2 package. It measures 1.0 x 0.6 x Packaging : Tape and Reel 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device Applications will protect one line operating at 3.3 volts. It gives the Cellular Handsets & Accessories designer the flexibility to protect single lines in applica- tions where arrays are not practical. They may be used Notebooks & Handhelds to meet the ESD immunity requirements of IEC 61000- Portable Instrumentation 4-2, Level 4 (15kV air, 8kV contact discharge). The Digital Cameras combination of small size and high ESD surge capability Peripherals makes them ideal for use in portable applications such MP3 Players as cellular phones, digital cameras, and MP3 players. Dimensions Schematic & PIN Configuration 1.0 0.60 0.65 0.50 Maximum Dimensions (mm) SLP1006P2 (Bottom View) www.semtech.com Revision 08/22/2007 1uClamp3311P PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 9s0 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 5sAmp pp ESD per IEC 61000-4-2 (Air) V +/- 25 kV PP ESD per IEC 61000-4-2 (Contact) +/- 20 OTperating Temperature -C40 to +85 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 3V.3 RWM PVunch-Through Voltage I=52 A3V. PT PT SVnap-Back Voltage I=850mA2V. SB SB RIeverse Leakage Current V=53.3V 05.0 0A. R RWM CVlamping Voltage I=81A, tp = 8/20 s V C PP CVlamping Voltage I=85A, tp = 8/20 s 1V C PP I/O pin to Gnd 152 1Fp JCunction Capacitance V = 0V, f = 1MHz j R I/O pin to Gnd 1F0 p V = 3.3V, f = 1MHz R www.semtech.com 2007 Semtech Corp. 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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