Clamp3381P High Power Clamp 3.3V ESD & Surge Protection PROTECTION PRODUCTS Description Features Clamp TVS diodes are designed to protect sensitive Transient protection for VBus and data lines to electronics from damage or latch-up due to EOS, IEC 61000-4-2 (ESD) 30kV (air), 30kV (contact) lightning, CDE, and ESD. They feature large cross- IEC 61000-4-4 (EFT) 40A (5/50ns) sectional area junctions for conducting high transient IEC 61000-4-5 (Lightning) 25A (8/20s) currents. These devices offer desirable characteristics Protects one line for board level protection including fast response time, Low ESD clamping voltage low operating and clamping voltage, and no device Working voltage: 3.3V degradation. Low leakage current Extremely low dynamic resistance: 0.025 Ohms (Typ) Clamp 3381P features extremely good protection Solid-state silicon-avalanche technology characteristics highlighted by high surge current capa- bility (25A, tp=8/20us), low peak ESD clamping voltage, Mechanical Characteristics and high ESD withstand voltage (+/-30kV contact per SGP1006N2 Package IEC 61000-4-2). Typical dynamic resistance is among the Pb-Free, Halogen Free, RoHS/WEEE Compliant industrys best at 0.025 Ohms. Each device will protect Nominal Dimensions: 1.0 x 0.60 x 0.50 mm one data or power line operating at 3.3 Volts. Lead Finish: NiPdAu Marking : Marking Code Packaging : Tape and Reel Clamp3381P is in a 2-pin SGP1006N2 package measuring 1.0 x 0.6 x 0.5mm. Leads are spaced at a Applications pitch of 0.65mm and feature a lead-free finish. The combination of small size, low operating voltage, Optical Modules 3.3V VBus Protection and high ESD surge capability makes them ideal for LCD TV protection of voltage bus lines in optical modules, LCD Tablet PC televisions, and tablet computers. Instrumentation CCTV Cameras Nominal Dimensions Schematic and Pin Configuration 1.00 12 0.80 0.60 0.50 1 SGP1006N2-1-R0 Nominal Dimensions in mm Clamp3381P (Bottom View) Clamp3381P 1 www.semtech.com Final Datasheet Rev 4.0 Semtech September 21, 2016Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (t = 8/20s) P 275 W p PK Peak Pulse Current (t = 8/20s) I 25 A p PP (1) ESD per IEC 61000-4-2 (Air) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Pin 1 to 2 or Pin 2 to 1 3.3 V RWM Reverse Breakdown Voltage V I = 1mA, Pin 1 to 2 or Pin2 to 1 4.5 8.5 10 V BR BR Reverse Leakage Current I V = 3.3V 1 100 nA R RWM Clamping Voltage V I = 25A, t = 8/20s, 11.5 V C PP p 2 ESD Clamping Voltage V I = 4A, t = 0.2/100ns (TLP) 8.3 V C PP p 2 ESD Clamping Voltage V I = 16A, t = 0.2/100ns (TLP) 8 V C PP p 2, 3 Dynamic Resistance R t = 0.2/100ns (TLP) 0.025 Ohms DYN p O Junction Capacitance C V = 0V, f = 1MHz T = 25 C 30 35 pF J R Notes: (1): Measured with a 20dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to Ground Refer- ence Plane (GRP) (2): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (3): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP Clamp3381P 2 www.semtech.com Final Datasheet Rev 4.0 Semtech September 21, 2016