1N6626 thru 1N6631 Standard SENSITRON UULLTTRRAAFFAASSTT RREECCTTIIFFIIEERRSS SEMICONDUCTOR TECHNICAL DATA A V AI L A B L E AS DATA SHEET 5077, REV. B.1 1N, J AN , J AN T X, J ANT XV J AN S J AN EQ U I V AL EN T * SJ * , SX* , SV* SS Standard Recovery Rectifiers Qualified per MIL-PRF-19500/590 DESCRIPTION: This voidless hermetically sealed standard recovery rectifier diode series is military qualified per MIL-PRF-19500/590 and is targeted for space, commerical and military aircraft, military vehicles, shipboard markets and all high reliability applications. FEATURES / BENEFITS: MAXIMUM RATINGS o Hermetic, non-cavity glass package Operating and Storage Temperature: -65 C to o Category I Metallurgically bonded +175 C o o Parts are hot solder dipped Junction Temperature: -65 C to +155 C JAN/ JANTX/ JANTXV available per MIL-PRF- 19500/590 ELECTRICAL CHARACTERISTICS Rating Symbol Condition Max Units WORKING PEAK REVERSE VOLTAGE 1N6626, U, US 200 1N6627, U ,US 400 1N6628, U, US V 600 Volts RWM 1N6629, U, US 800 1N6630 ,U, US 900 ICONDUCTO1NR 6631, U, US 1000 AVERAGE RECTIFIED FORWARD CURRENT o 2.3 1N6626 thru 1N6628 I T = 75 C Amps o L 1.8 1N6629 thru 1N6631 TECHNICAL DATA AVERAGE RECTIFIED FORWARD CURRENT 4.0 o DATA SHEET 5077, REV. B 1N6626U, US thru 1N6628U, US I T = 110 C Amps o EC 2.8 1N6629U, US thru 1N6631U, US PEAK FORWARD SURGE CURRENT 1N6626, U, US thru 1N6630,U, US I T =8.3ms 75 A(pk) FSM p 1N6631, U, US 60 MAXIMUM REVERSE CURRENT o 1N6626, U, US thru 1N6630,U, US I V T = 25 C 2.0 Amps R RWM j 1N6631, U, US 4.0 MAXIMUM REVERSE CURRENT o 1N6626, U, US thru 1N6630,U, US I V T = 150 C 500 Amps R RWM j 1N6631, U, US 600 *Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from wafer fabrication through assembly and testing using our internal specification. 2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales sensitron.com 1N6626 thru 1N6631 Standard SENSITRON UULLTTRRAAFFAASSTT RREECCTTIIFFIIEERRSS SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5077, REV. B.1 Rating Symbol Condition Max Units MAX. PEAK FORWARD VOLTAGE (PULSED) I =4A 1.50 F 1N6626, U, US thru 1N6628,U, US V I =3A 1.70 Volts FM F 1N6629,U, US to 1N6630,U, US I =2A 1.95 F 1N6631, U, US PEAK RECOVERY CURRENT I =2A, 1N6626, U, US thru 1N6628,U, US F 3.5 I A(pk) RM 1N6629,U, US to 1N6630,U, US 100A/ 4.2 1N6631, U, US 5.0 MAXIMUM REVERSE RECOVERY TIME 1N6626, U, US thru 1N6628,U, US I =0.5A 30 F T ns rr 1N6629,U, US to 1N6630,U, US I =1.0A 50 RM 1N6631, U, US 60 FORWARD RECOVERY VOLTAGE 1N6626, U, US thru 1N6628,U, US I =1A 8 F V Volts FRM 1N6629,U, US to 1N6630,U, US t =12ns 12 r 1N6631, U, US 20 THERMAL RESISTANCE (Axial) o R L=.375 C/W JL 1N6626 thru 1N6631 22 THERMAL RESISTANCE (MELF) o L=0 C/W R JC 1N6626U, US thru 1N6631U, US 6.5 GRAPHS 2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales sensitron.com