Product Information

SG01S-18

SG01S-18 electronic component of Sglux

Datasheet
PHOTODIODE, SIC UV , A=0.06MM2, TO18

Manufacturer: Sglux
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 45.0264 ea
Line Total: USD 45.03

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

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SG01S-18
Sglux

1 : USD 57.0911
5 : USD 52.5601
10 : USD 48.0415
50 : USD 45.3128
100 : USD 42.3029

     
Manufacturer
Product Category
Dark Current
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity
Diode Case Style
No Of Pins
Operating Temperature Min
Operating Temperature Max
Packaging
Msl
Operating Temperature Range
Spectral Sensitivity
Wavelength Typ
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SG01S18 2 Broadband SiC based UV photodiode A = 0,06 mm 1/4 General FeatureS Properties of the SG01S18 UV photodiode Broadband UVA+UVB+UVC, PTB reported high chip stability 2 Active Area A = 0,06 mm TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin 2 10mW/cm peak radiation results a current of approx. 780 nA About the material Silicon Carbide (SiC) SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV de- tectors. The SiC detectors can be permanently operated at up to 170C (338F). The temperature coefficient of signal (responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3). Options 2 2 SiC photodiodes are available with five different active chip areas from 0,06 mm up to 4,00 mm . Standard version is broadband UVA-UVB-UVC. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermeti - cally sealed metal housing (TO type), either a 5,5 mm diameter TO18 housing or a 9,2 mm TO5 housing. Further op- tion is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded). nomenclature SG01 SS,, MM,, DD,, LL,, XXLL nothing, A, B, C or Enothing, A, B, C or E 18, 18ISO90, 18S, 5, 5ISO9018, 18ISO90, 18S, 5, 5ISO90 nothing, Lens, nothing, Lens, MEGA, GIGAMEGA, GIGA Chip areaChip area Spectral responseSpectral response HousingHousing SpecialSpecial 18 18 2-pin TO18 housing, h = 5,2 mm, 2-pin TO18 housing, h = 5,2 mm, SS nothing = broadbandnothing = broad band Lens 2 Lens 1 pin isolated, 1 pin grounded1 pin isolated, 1 pin grounded 0,06 mm0,06 mm with s = = 340 nm s 280 nm = = 340 nm s 221 nm ... 358 nm = 340 nm maxmax 10% leftS10% 10% right with concentrating concentrating lens, TO5 only lens, 18ISO90 18ISO90 3-pin TO18 housing, h = 5,2 3-pin TO18 housing, h = TO5 only MM A = UVAA = UVA 2 mm, 2 pins isolated, 1 pin grounded5,2 mm, 2 pins isolated, 1 pin grounded 0,20 mm0,20 mm s = = 340 nm s 331 nm = = 340 nm s 309 nm ... 367 nm = 340 nm maxmax 10% leftS10% 10% right MEGA MEGA with 18S 18S 2-pin TO18 housing, h = 3,7 mm, 2-pin TO18 housing, h = 3,8 mm, DD B = UVBB = UVB with attenuator 2 altenuator up 1 pin isolated, 1 pin grounded1 pin isolated, 1 pin grounded 0,50 mm0,50 mm 2 s = = 340 nm s 280 nm = = 340 nm s 231 nm ... 309 nm = 340 nm up to 0,5 W/cm2 maxmax 10% leftS10% 10% right to 0,5 W/cm 5 5 2-pin TO5 housing, h = 4,3 mm for 2-pin TO5 housing, h = 4,3 mm LL C = UVCC = UVC for broad band d h = 6,6 mm for filtered 2 broadband h = 6,7 mm for filtered UVA, 1,00 mm1,00 mm s = = 340 nm s 275 nm = = 340 nm s 225 nm ... 287 nm = 340 nm maxmax 10% leftS10% 10% right GIGA UVB, UVC, UVIUVA, UVB, UVC, UVI GIGA with with attenuator altenuator up 2 5ISO90 5ISO90 3-pin TO5 housing, h = 4,2 2-pin TO housing, h = 5,2 mm, XLXL E = UV-IndexE = UV-Index up to 7 W/cm2 to 7 W/cm 2 mm, 2 pins isolated, 1 pin grounded1 pin isolated, 1 pin grounded 4,0 mm4,00 mm spectral response according to CIE087 s = 340 nm s = 340 nm s = 340 nm max 10% left 10% right sglux GmbH Max-Planck-Str. 3 D12489 Berlin Tel. +49 30 5301 5211 welcome sglux.de www.sglux.de Rev. 6.0 Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C.SG01S18 2 Broadband SiC based UV photodiode A = 0,06 mm 2/4 SpeciFSication Parameter Symbol Value Unit Spectral Characteristics 1 Typical Responsivity at Peak Wavelength S 0,130 AW max Wavelength of max. Spectral Responsivity 280 nm max Responsivity Range (S=0,1*S ) 221 358 nm max 10 Visible Blindness (S /S ) VB > 10 max >405nm General Characteristics (T=25C) 2 Active Area A 0,06 mm Dark Current (1V reverse bias) I 0,2 fA d Capacitance C 15 pF 2 Short Circuit (10mW/cm at peak) I 780 nA o Temperature Coefficient T < 0,1 %/K c Maximum Ratings Operating Temperature T 55 +170 C opt Storage Temperature T 55 +170 C stor Soldering Temperature (3s) T 260 C sold Reverse Voltage V 20 V Rmax normalized Spectral Ser ponSivity sglux GmbH Max-Planck-Str. 3 D12489 Berlin Tel. +49 30 5301 5211 welcome sglux.de www.sglux.de Rev. 6.0 Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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