Product Information

2SK3018W

2SK3018W electronic component of Shikues

Datasheet
MOSFET N Channel 30V 100mA 1.5V @ 100uA 8O @ 10mA,4V SOT-323 RoHS
Manufacturer: Shikues
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0263 ea
Line Total: USD 0.53

2405 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
1435 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 20
Multiples : 20

Stock Image

2SK3018W
Shikues

20 : USD 0.0255
200 : USD 0.0201
600 : USD 0.0172
3000 : USD 0.0154
9000 : USD 0.0138
21000 : USD 0.0129

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

iThe Shikuesi 2SK3018W is a MOSFET N Channel 30V, 100mA 1.5V @ 100uA 8O @ 10mA, 4V SOT-323 RoHS component. It is a type of Field-effect transistor (FET) with dual metal-oxide-semiconductor (MOS) regions. This component can control the flow of electrical current with a small voltage and current, making it ideal for applications such as amplifying, switching, and voltage regulation. It is designed in a SOT-323 RoHS package and is RoHS compliant. The 2SK3018W has a high voltage rating of 30V, a drain current rating of 100mA, a source-to-drain voltage rating of 1.5V @ 100uA, and a gate-to-source voltage rating of 4V @ 10mA. This component is suitable for a variety of applications, such as automotive, industrial, and consumer electronics.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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