Product Information

IRLML6401

IRLML6401 electronic component of Shikues

Datasheet
MOSFET P Channel 16V 3A 1.5V @ 250uA 110mO @ 3A,4.5V SOT-23 RoHS
Manufacturer: Shikues
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0738 ea
Line Total: USD 0.74

21165 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
19768 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 10
Multiples : 10

Stock Image

IRLML6401
Shikues

10 : USD 0.0561
100 : USD 0.0497
300 : USD 0.0464
3000 : USD 0.0398
6000 : USD 0.0378
9000 : USD 0.0369

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The IRLML6401 with MOSFET P Channel 16V 3A 1.5V@ 250uA 110mO @ 3A, 4.5V SOT-23 RoHS manufactured by Shikues is a multi-level, low gate charge, P-Channel MOSFET with RoHS-compliant SOT-23 packaging. The device has a 3A continuous drain current capability, a maximum 16V drain source voltage, and an ultra-low 1.5V gate-source threshold voltage. It also offers a low gate charge of 110mO @ 3A and an extremely low quiescent current of 250uA @ 4.5V, making it ideal for use in low-power applications such as battery-powered and low-voltage systems. The part is also RoHS-compliant, meaning it is free of hazardous materials which makes it perfect for use in products requiring environmentally-friendly components.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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