Bridge Diode Dual In-Line Package OUTLINE Unit : mm Package1W S1WB(A) /60B Weight : 0.46gtyp. 800V 1A S1WB 2076 DIP IFSM Feature Small-DIP Large IFSM High-Reliability Unit : mm Package 1W Weight : 0.46gtyp. S1WB 6043 Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection. RATINGS Absolute Maximum Ratings l S1WB A S1WB A 60B Type No. Symbol Item Conditions 60 80 60 Unit Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current 50Hz sine wave, Resistance load, Ta=25 Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 Current Squared Time per diode Electrical Characteristics l Forward Voltage Pulse measurement, per diode Reverse Current Pulse measurement, per diode l Junction to Lead Thermal Resistance Junction to Ambient J534-1 22Small DIP Bridge S1WB(A) /60B CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical Semiconductor products generally have characterristic variation. Typical is a statistical average of the devices ability. J534-1 23