Product Information

SVD3205T

SVD3205T electronic component of Silan

Datasheet
MOSFET N Trench 55V 110A (Tc) 3.5V @ 250uA 8 mΩ @ 62A,10V TO-220-3L RoHS

Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6573 ea
Line Total: USD 0.66

2 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

SVD3205T
Silan

1 : USD 0.6164
10 : USD 0.5037
50 : USD 0.4472
100 : USD 0.3929
500 : USD 0.3585
1000 : USD 0.3425

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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MicroelectronicsThe SVD3205T with MOSFET N Trench 55V 110A (Tc) 3.5V @ 250uA 8 mΩ @ 62A,10V TO-220-3L RoHS is a high-power MOSFET manufactured by Silan Microelectronics. It is designed to handle a high voltage and current load and has a very low on resistance state. It features an ultra-fast response time and its 3.5V threshold voltage makes it suitable for a wide range of applications. It has a maximum junction temperature of 250 degrees Celsius and a maximum drain current of 62A. This MOSFET has a TO-220-3L RoHS package and is lead-free, making it environmentally friendly.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Hangzhou Silan Microelectronics

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