Product Information

SE10060A

SE10060A electronic component of SINO-IC

Datasheet
MOSFET N Trench 100V 60A 4V @ 250uA 17 mΩ @ 40A,10V TO-220 RoHS

Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6808 ea
Line Total: USD 0.68

7 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SE10060A
SINO-IC

1 : USD 0.6588
10 : USD 0.5419
50 : USD 0.4855
100 : USD 0.4271
500 : USD 0.3929
1000 : USD 0.3748

     
Manufacturer
Product Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SE10060A is a MOSFET N-Trench made by SINO-IC. It is specifically designed for power applications, with a maximum 100V voltage rating and a current rating of up to 60A. The gate-source threshold voltage, required for proper operation, is 4V @ 250uA, while the drain-source on-state resistance is 17 mO @ 40A, and 10V. The device is packaged in the TO-220 RoHS package, which is a useful and widely compatible package for power semiconductors.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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