Preliminary SiT1618 High Temperature, Standard Frequency Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications 33 standard frequencies between 7.3728 MHz and 48 MHz Automotive, medical, industrial and other high reliability electronics 100% pin-to-pin drop-in replacement to quartz-based XO Infotainment systems, industrial sensors, collision detection devices, equipment control boards, etc. Excellent total frequency stability as low as 25 PPM Industry best G-sensitivity of 0.1 PPB/G Low power consumption of 3.6 mA typical Standby mode for longer battery life LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm Pb-free, RoHS and REACH compliant Optional unique device ID for complete traceability (contact SiTime) Optional AECQ100 compliance (contact SiTime) 1, 2 Electrical Characteristics Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f (Refer to the frequency list page 5) MHz 33 standard frequencies between 7.3728 MHz and 75 MHz Frequency Stability and Aging Frequency Stability F stab -25 +25 PPM Inclusive of Initial tolerance at 25C, and variations over operating temperature, rated power supply voltage and load. -50 +50 PPM Aging Ag 1.5 1.5 PPM 1st year at 25C Operating Temperature Range Operating Temperature Range T use -40 -105 C Extended Industrial -40 +125 C Automotive Supply Voltage and Current Consumption Supply Voltage Vdd 1.62 1.8 1.98 V Contact SiTime for 1.5V support 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 3.63 V Current Consumption Idd 3.9 5 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V 3.6 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V Standby Current I std 2.5 10 AST = GND, Vdd = 3.0V or 3.3V, Output is Weakly Pulled Down 2.5 10 AST = GND, Vdd = 2.5V or 2.8V, Output is Weakly Pulled Down 1 5 AST = GND, Vdd = 1.8V, Output is Weakly Pulled Down LVCMOS Output Characteristics Duty Cycle DC 45 55 % All Vdds Rise/Fall Time Tr, Tf 1.2 2.5 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% 1.5 3.5 ns Vdd =1.8V, 20% - 80% 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80% Output High Voltage VOH 90% Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input Characteristics Input High Voltage VIH 70% Vdd Pin 1, OE or ST Input Low Voltage VIL 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z in 100 250 k Pin 1, OE logic high or logic low, or ST logic high 2 M Pin 1, ST logic low Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge option for EMI reduction. SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 0.92 Revised January 16, 2013SiT1618 High Temperature, Standard Frequency Oscillator The Smart Timing Choice The Smart Timing Choice 1, 2 Electrical Characteristics (continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time T start 5 ms Measured from the time Vdd reaches its rated minimum value Enable/Disable Time T oe 150 ns Resume Time T resume 5 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter T jitt 2 4 ps f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V 2 4.5 ps f = 20 MHz, Vdd = 1.8V RMS Phase Jitter (random) T phj 0.7 1 ps Integration bandwidth = 900 kHz to 7.5 MHz 1.5 3 ps Integration bandwidth = 12 kHz to 20 MHz Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge option for EMI reduction. Pin Description Pin Symbol Functionality Top View 3 Output H or Open : specified frequency output Enable L: output is high impedance. Only output driver is disabled. 3 1 OE/ ST 1 4 OE/ST VDD H or Open : specified frequency output Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I std. 4 2 GND Power Electrical ground 2 3 3 OUT Output Oscillator output GND OUT 4 4 VDD Power Power supply voltage Notes: 3. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 4. A capacitor value of 0.1 F between Vdd and GND is recommended. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor- mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Junction Temperature 150 C Thermal Consideration JA, 4 Layer Board JA, 2 Layer Board JC, Bottom Package C/W) (C/W) (C/W) 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 124 227 26 Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev. 0.92 Page 2 of 5 www.sitime.com