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8103AI-13-33E-10.00000

8103AI-13-33E-10.00000 electronic component of SiTime

Datasheet
Oscillator MEMS 10MHz ±50ppm (Stability) 15pF LVCMOS/LVTTL 55% 3.3V 4-Pin QFN SMD Bulk

Manufacturer: SiTime
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Price (USD)

1: USD 1.354 ea
Line Total: USD 1.35

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.354
10 : USD 1.2739

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10
Multiples : 10
10 : USD 1.3269

     
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SiT8103 High Performance 1-110 MHz Oscillator Features, Benefits and Applications MEMS oscillator with LVCMOS/LVTTL compatible output 1-110 MHz frequency range Frequency stability as low as 20 PPM Typical current consumption of 6.1 mA in active mode Standby or output enable modes 1.8V, 2.5V - 3.3V supply voltage TM SoftEdge configurable rise/fall time for driving higher loads or EMI reduction. Four industry-standard packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm All-silicon device with outstanding reliability of 2 FIT, 10x improvement over quartz-based devices Ultra short lead time Ideal for consumer electronics: video, set top boxes, HDTV, DVR, scanners, printers, IP camera, etc. Ideal for high-speed serial protocols: Ethernet, USB, SATA, SAS, Fibre Channel, Firewire, PCI Express Specifications 1 Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Output Frequency Range f 1 110 MHz Frequency Stability F stab -20 +20 PPM Inclusive of: Initial stability, operating temperature, rated power, supply voltage change, load change, shock and vibration. -25 +25 PPM -30 +30 PPM 20 PPM available in extended commercial temperature only -50 +50 PPM Aging Ag -1.0 1.0 PPM 1st year at 25C Operating Temperature Range T use -20 +70 C Extended Commercial -40 +85 C Industrial Supply Voltage Vdd 1.71 1.8 1.89 V Any voltage between 2.5V and 3.3V is supported with 1 decimal point resolution. 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.97 3.3 3.63 V Current Consumption Idd 6.7 7.5 mA No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V 6.1 6.7 mA No load condition, f = 20 MHz, Vdd = 1.8 V Standby Current I std 2.4 4.3 AST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down 1.2 2.2 AST = GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down 0.4 0.8 AST = GND, Vdd = 1.8 V, Output is Weakly Pulled Down Duty Cycle DC 45 50 55 % All Vdds. f <= 75 MHz 40 50 60 % All Vdds. f > 75 MHz Rise/Fall Time Tr, Tf 1 2 ns 15pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V 1.3 2.5 ns 15pF load, 20% - 80% Vdd=1.8V 1.9 2.6 ns 30pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V 2.3 3.3 ns 30pF load, 20% - 80% Vdd=1.8V 2.9 3.9 ns 45pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V 3.4 4.6 ns 45pF load, 20% - 80% Vdd=1.8V Output Voltage High VOH 90% Vdd IOH = -4 mA (Vdd = 3.3 V) IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V) Output Voltage Low VOL 10% Vdd IOH = -2 mA (Vdd = 1.8 V) Input Voltage High VIH 70% Vdd Pin 1, OE or ST Input Voltage Low VIL 30% Vdd Pin 1, OE or ST Startup Time T start 10 ms Measured from the time Vdd reaches its rated minimum value Resume Time T resume 3.0 4 ms Measured from the time ST pin crosses 50% threshold RMS Period Jitter T jitt 4.0 ps f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V 6.5 ps f = 75 MHz, Vdd = 1.8 V RMS Phase Jitter (random) T phj 0.6 ps f = 75 MHz BW: 900 kHz to 7.5 MHz, VDD = 2.5 V to 3.3 V 0.8 ps f = 75 MHz BW: 900 kHz to 7.5 MHz, VDD = 1.8 V Note: TM 1. All electrical specifications in the above table are measured with 15pF output load, unless stated otherwise in the Condition. For more information about SoftEdge rise/fall time for driving higher output load or reducing EMI, download SiT8103 High Performance 1-110 MHz Oscillator Pin Description Tables Pin 1 Functionality Pin Map OE Pin Connection 2 H or Open : specified frequency output 1 OE/ST L: output is high impedance 2GND 3CLK ST H or Open: specified frequency output 4 VDD L: output is low level (weak pull down). Oscillation stops Absolute Maximum Table Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 4 V Electrostatic Discharge 6000 V Theta JA (with copper plane on VDD and GND) 75 C/W Theta JC (with PCB traces of 0.010 inch to all pins) 24 C/W Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Number of Program Writes 1 NA Program Retention over -40 to 125C, Process, VDD (0 to 3.65 V) 1,000+ years Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Startup and Resume Timing Diagram 90% Vdd: 2.5/2.8/3.3 V parts Vdd ST Voltage Vdd 95% Vdd: 1.8 V parts Pin 4 Voltage 50% Vdd T resume T start CLK Output CLK Output T resume: Time to resume from ST T start: Time to start from power-off (ST Mode Only) (ST/OE Mode) Note: 2. In 1.8 V mode, a resistor of <100 k between OE pin and VDD is required. Dimensions and Land Patterns Rev. 1.46 Page 2 of 4 www.sitime.com

Tariff Desc

8541.60.00 25 No - Mounted piezo-electric crystals Free
SiTime
SiTime Corporation

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