SiT8208 Ultra Performance Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications Any frequency between 1 and 80 MHz accurate to 6 decimal places SATA, SAS, Ethernet, PCI Express, video, WiFi 100% pin-to-pin drop-in replacement to quartz-based oscillators Computing, storage, networking, telecom, industrial control Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz) Frequency stability as low as 10 PPM Industrial or extended commercial temperature range LVCMOS/LVTTL compatible output Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and field programmable oscillators Outstanding silicon reliability of 2 FIT or 500 million hour MTBF Pb-free, RoHS and REACH compliant Ultra short lead time 1 Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f1 80 MHz Frequency Stability and Aging Frequency Stability F stab -10 +10 PPM Inclusive of Initial tolerance at 25 C, and variations over operating temperature, rated power supply voltage and load -20 +20 PPM -25 +25 PPM -50 +50 PPM First year Aging F aging -1.5 +1.5 PPM 25C 10-year Aging -5 +5 PPM 25C Operating Temperature Range Operating Temperature Range T use -20 +70 C Extended Commercial -40 +85 C Industrial Supply Voltage and Current Consumption Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported. Contact SiTime for additional information. 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.97 3.3 3.63 V Current Consumption Idd 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V OE Disable Current I OD 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down Standby Current I std 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down 10 A Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down LVCMOS Output Characteristics Duty Cycle DC 45 55 % Rise/Fall Time Tr, Tf 1.2 2 ns 15 pF load, 10% - 90% Vdd Output Voltage High VOH 90% Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V) IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V) Output Voltage Low VOL 10% Vdd Input Characteristics Input Voltage High VIH 70% Vdd Pin 1, OE or ST Input Voltage Low VIL 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z in 100 250 k Pin 1, OE logic high or logic low, or ST logic high 2 M Pin 1, ST logic low Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.02 Revised June 24, 2013SiT8208 Ultra Performance Oscillator The Smart Timing Choice The Smart Timing Choice 1 Electrical Characteristics (Continued) Parameter Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time T start 7 10 ms Measured from the time Vdd reaches its rated minimum value OE Enable/Disable Time T oe 150 ns f = 80 MHz, For other frequencies, T oe = 100 ns + 3 cycles Resume Time T resume 6 10 ms In standby mode, measured from the time ST pin crosses 50% threshold. Refer to Figure 5. Jitter RMS Period Jitter T jitt 1.5 2 ps 2 3 ps f = 75 MHz, Vdd = 1.8V RMS Phase Jitter (random) T phj 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Pin Configuration Pin Symbol Functionality 2 Top View Output H or Open : specified frequency output Enable L: output is high impedance. Only output driver is disabled. 2 1 OE/ ST H or Open : specified frequency output 1 4 OE/ST VDD Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I std. 3 2 GND Power Electrical ground 3 OUT Output Oscillator output 2 3 OUT GND 3 4 VDD Power Power supply voltage Notes: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 3. A capacitor of value 0.1 F between Vdd and GND is recommended. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor- mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Junction Temperature 150 C Thermal Consideration JA, 4 Layer Board JA, 2 Layer Board JC, Bottom Package (C/W) (C/W) (C/W) 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev. 1.02 Page 2 of 10 www.sitime.com