SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications Any frequency between 1 MHz and 110 MHz accurate to 6 decimal Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, places GPON, EPON, etc Operating temperature from -40C to 85C. Refer to SiT8918 and Ideal for high-speed serial protocols such as: USB, SATA, SAS, SiT8920 for high temperature options Firewire, 100M / 1G / 10G Ethernet, etc. Excellent total frequency stability as low as 20 PPM Low power consumption of 3.6 mA typical Programmable drive strength for improved jitter, system EMI reduction, or driving large capacitive loads LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and field programmable oscillators Pb-free, RoHS and REACH compliant 1 Electrical Characteristics Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f1 110 MHz Frequency Stability and Aging Frequency Stability F stab -20 +20 PPM Inclusive of Initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply -25 +25 PPM voltage and load (15 pF 10%). -50 +50 PPM Operating Temperature Range Operating Temperature Range T use -20 +70 C Extended Commercial -40 +85 C Industrial Supply Voltage and Current Consumption Supply Voltage Vdd 1.62 1.8 1.98 V Contact SiTime for 1.5V support 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 3.63 V Current Consumption Idd 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V 3.6 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V 3.4 3.9 mA No load condition, f = 20 MHz, Vdd = 1.8V OE Disable Current I OD 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down 3.8 mA Vdd = 1.8V, OE = GND, output is Weakly Pulled Down Standby Current I std 2.6 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down 1.4 2.5 A ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down 0.6 1.3 A ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down LVCMOS Output Characteristics Duty Cycle DC 45 55 % All Vdds Rise/Fall Time Tr, Tf 1 2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% 1.3 2.5 ns Vdd =1.8V, 20% - 80% 2 ns Vdd = 2.25V - 3.63V, 20% - 80% Output High Voltage VOH 90% Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input Characteristics Input High Voltage VIH 70% Vdd Pin 1, OE or ST Input Low Voltage VIL 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z in 87 100 k Pin 1, OE logic high or logic low, or ST logic high 2 M Pin 1, ST logic low Note: 1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated. SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.11 Revised May 27, 2013SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice 1 Electrical Characteristics (continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time T start 5 ms Measured from the time Vdd reaches its rated minimum value Enable/Disable Time T oe 130 ns f = 110 MHz. For other frequencies, T oe = 100 ns + 3 * cycles Resume Time T resume 5 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter T jitt 1.76 3 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V 1.78 3 ps f = 75 MHz, Vdd = 1.8V RMS Phase Jitter (random) T phj 0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Pin Description Pin Symbol Functionality 2 H or Open : specified frequency output Top View Output Enable L: output is high impedance. Only output driver is disabled. 1 2 OE/ ST H or Open : specified frequency output Standby 1 4 L: output is low (weak pull down). Device goes to sleep mode. Supply OE/ST VDD current reduces to I std. 3 2 GND Power Electrical ground 3 OUT Output Oscillator output 3 2 3 GND OUT 4 VDD Power Power supply voltage Notes: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 3. A capacitor value of 0.1 F between Vdd and GND is recommended. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor- mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Junction Temperature 150 C Thermal Consideration JC, Bottom Package JA, 4 Layer Board (C/W) JA, 2 Layer Board (C/W) (C/W) 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 124 227 26 Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev. 1.11 Page 2 of 11 www.sitime.com