Product Information

S34ML01G100TFI003

S34ML01G100TFI003 electronic component of SkyHigh Memory

Datasheet
Spansion Flash 1Gb 3V 25ns NAND Flash

Manufacturer: SkyHigh Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

S34ML01G100TFI003
SkyHigh Memory

1 : USD 4.298
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1000

Stock Image

S34ML01G100TFI003
SkyHigh Memory

1000 : USD 4.3219
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

S34ML01G100TFI003
SkyHigh Memory

1 : USD 4.8805
10 : USD 4.1071
25 : USD 4.0707
100 : USD 3.6831
250 : USD 3.5241
500 : USD 3.3845
1000 : USD 3.2566
2000 : USD 3.2101
5000 : USD 3.1054
N/A

Obsolete
0 - WHS 4

MOQ : 1000
Multiples : 1000

Stock Image

S34ML01G100TFI003
SkyHigh Memory

1000 : USD 4.1037
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Package / Case
Series
Memory Size
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Memory Type
Operating Temperature Range
Speed
Architecture
Brand
Maximum Operating Current
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Product
Cnhts
Hts Code
Mxhts
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"Spansion, Inc andCypress Semiconductor Corp have merged together to deliver high-performance, high-quality solutions at the heart of today's most advanced embedded systems, from automotive, industrial and networking platforms to highly interactive consumer and mobile devices. The new company Cypress Semiconductor Corp will continue to offerSpansion, Inc products to new and existing customers. Continuity of Specifications There is no change to this document as a result of offering the device as a Cypress product. Any changes that have been made are the result of normal document improvements and are noted in the document history page, where supported. Future revisions will occur when appropriate, and changes will be noted in a document history page. Continuity of Ordering Part Numbers Cypress continues to support existing part numbers. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local sales office for additional information about Cypress products and solutions.S34ML01G1, S34ML02G1, S34ML04G1 1 Gbit, 2 Gbit, 4 Gbit, 3 V SLC NAND Flash for Embedded Distinctive Characteristics Density NAND Flash Interface 1 Gbit / 2 Gbit / 4 Gbit Open NAND Flash Interface (ONFI) 1.0 compliant Address, Data and Commands multiplexed Architecture Input / Output Bus Width: 8-bits / 16-bits Supply Voltage Page Size: 3.3V device: Vcc = 2.7V ~ 3.6V x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area Security x16 = 1056 (1024 + 32) words; 32 words is spare area One Time Programmable (OTP) area Block Size: 64 Pages Hardware program/erase disabled during power transition x8 = 128k + 4k bytes Additional Features x16 = 64k + 2k words 2 Gb and 4 Gb parts support Multiplane Program and Erase Plane Size: commands 1 Gbit / 2 Gbit: 1024 Blocks per Plane Supports Copy Back Program x8 = 128M + 4M bytes 2 Gb and 4 Gb parts support Multiplane Copy Back Program x16 = 64M + 2M words Supports Read Cache 4 Gbit: 2048 Blocks per Plane Electronic Signature x8 = 256M + 8M bytes Manufacturer ID: 01h x16 = 128M + 4M words Device Size: Operating Temperature 1 Gbit: 1 Plane per Device or 128 Mbyte Industrial: -40C to 85C 2 Gbit: 2 Planes per Device or 256 Mbyte Automotive: -40C to 105C 4 Gbit: 2 Planes per Device or 512 Mbyte Performance Page Read / Program Reliability Random access: 25 s (Max) 100,000 Program / Erase cycles (Typ) (with 1 bit ECC per 528 bytes (x8) or 264 words (x16)) Sequential access: 25 ns (Min) 10 Year Data retention (Typ) Program time / Multiplane Program time: 200 s (Typ) Blocks zero and one are valid and will be valid for at least 1000 Block Erase (S34ML01G1) program-erase cycles with ECC Block Erase time: 2.0 ms (Typ) Package Options Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) Lead Free and Low Halogen Block Erase time: 3.5 ms (Typ) 48-Pin TSOP 12 x 20 x 1.2 mm 63-Ball BGA 9 x 11 x 1 mm Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00676 Rev. *Q Revised November 02, 2015

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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