X-On Electronics has gained recognition as a prominent supplier of S34ML16G303TFV000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML16G303TFV000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34ML16G303TFV000 SkyHigh Memory

S34ML16G303TFV000 electronic component of SkyHigh Memory
S34ML16G303TFV000 SkyHigh Memory
S34ML16G303TFV000 NAND Flash
S34ML16G303TFV000  Semiconductors

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Part No. S34ML16G303TFV000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash
Datasheet: S34ML16G303TFV000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.62 ea
Line Total: USD 19.62 
Availability - 99
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
99
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 19.62
10 : USD 16.929
25 : USD 16.709
100 : USD 15.224
210 : USD 14.223
420 : USD 14.223
1050 : USD 14.157
2520 : USD 14.146
5040 : USD 13.673

   
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We are delighted to provide the S34ML16G303TFV000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML16G303TFV000 and other electronic components in the NAND Flash category and beyond.

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S34ML16G3 16 Gb, 3 V, 2K Page Size, x8 I/O, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density Security 16 Gb (4Gb 4) OTP area Serial number (unique ID) Architecture Hardware program/erase disabled during power transition Architecture (for each 4 Gb device) Volatile and Permanent Block Protection Input / Output Bus Width: 8 bits Electronic Signature Page Size 4 Gb: (2048 + 128) bytes 128-byte spare area Manufacturer ID: 01h Device ID: Follow industry standard for single and stacked Block Size: 64 Pages die implementation 4 Gb: 128 KB + 8 KB Plane Size Operating Temperature 4 Gb: 2048 blocks per plane or (256 MB + 16 MB) Industrial: 40 C to 85 C Device Size Industrial Plus: 40 C to 105 C 4 Gb: Two planes per device or 512 MB Additional Features NAND Flash Interface Multiplane Program and Erase commands Copy Back Program Open NAND Flash Interface (ONFI) 1.0 compliant Multiplane Copy Back Program Address, Data, and Commands multiplexed Reset (FFh) command is required after power-on as a first Supply Voltage command 3.3-V device: V = 2.7 V ~ 3.6 V CC Performance Page Read / Program Package Options Read Page Time (t ): Pb-free and low halogen R 45 s (Typ) / Single Plane 48-Pin TSOP 12 20 1.2 mm 55 s (Typ) / Multiplane Program time / Multiplane Program time: 350 s (Typ) Block Erase / Multiplane Erase Block Erase time: 4 ms (Typ) Reliability 80,000 Program / Erase cycles (Typ) 10 Year Data retention (Typ) Blocks 0-7 are good at the time of shipment SkyHigh Memory Limited Suite 4401-02, 44/F One Island East, www.skyhighmemory.com Document Number: 002-24116 Rev. 18 Westlands Road Hong Kong A Revised June 23, 2019Revised June 23, 2020S34ML16G3 Contents 1. General Description..................................................... 3 10.1 Valid Blocks.......................................................... 19 10.2 Absolute Maximum Ratings.................................. 19 2. Connection Diagram.................................................... 3 10.3 Recommended Operating Conditions .................. 19 3. Pin Description............................................................. 4 10.4 AC Test Conditions .............................................. 19 4. Block Diagrams............................................................ 5 10.5 DC Characteristics ............................................... 20 10.6 Pin Capacitance ................................................... 20 5. Addressing ................................................................... 6 11. Package Diagrams...................................................... 21 6. Read Status Enhanced................................................ 7 11.1 48-Pin Thin Small Outline Package (TSOP1) ...... 21 7. Read ID.......................................................................... 7 12. Ordering Information.................................................. 22 7.1 Read Parameter Page........................................... 8 13. Document History Page ............................................. 23 8. OTP.............................................................................. 11 8.1 OTP Protection.................................................... 11 9. Security Features....................................................... 12 9.1 Volatile Block Protection (VBP) Overview ........... 12 9.2 Permanent Block Protection (PBP) Overview ..... 16 10. Electrical Characteristics.......................................... 19 Document Number: 002-24116 Rev. A Page 2 of 23

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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