1997
P-Channel Logic Level
Features
) GS
) GS
effect transistors are produced using Fairchild's proprietary,
) GS
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
.
2
S
G
D
T = 25C unless otherwise noted
C
V V
V V
A
I
D
P C W
D C
C W/ C
T
J
1997 Fairchild Semiconductor Corporation
NDP6020P Rev.C1
STG
C -65 to 175 Operating and Storage Temperature Range ,T
0.4 Derate above 25
60 = 25 Total Power Dissipation @ T
-70 - Pulsed
-24 - Continuous Drain Current
GSS
8 - Continuous Gate-Source Voltage
DSS
-20 Drain-Source Voltage
Units NDB6020P NDP6020P Parameter Symbol
Absolute Maximum Ratings
____________________________________________________________________ ______ ______
hole and surface mount applications.
PAK) package for both through TO-220 and TO-263 (D
DS(ON)
for extremely low R High density cell design
resistance to transients are needed.
175C maximum junction temperature rating.
for an external Zener diode transient suppressor.
commutation modes. These devices are particularly suited for
Rugged internal source-drain diode can eliminate the need
temperature.
Critical DC electrical parameters specified at elevated
DS(ON
V. = -2.5 @ V = 0.075 R
DS(ON
V. = -2.7 @ V = 0.07 R
DS(ON These logic level P-Channel enhancement mode power field
V. = -4.5 @ V = 0.05 V. R A, -20 -24
General Description
Enhancement Mode Field Effect Transistor
/ NDB6020P NDP6020P
September (T = 25C unless otherwise noted)
C
V A V
I V V A
A
T
J
I V
I V
V V , A V
D
T
J
R V I
D
T
J
R V I
D
R V I
D
I V A
D
g V S
D
V
C
C
C
t V
D
V
t
r
t
t
f
Q V
g
I
D
Q 5
Q
NDP6020P Rev.C1
gd
nC 10 Gate-Drain Charge
gs
nC Gate-Source Charge
GS
V = -5 A, V = -24
DS
nC 35 25 V, = -10 Total Gate Charge
nS 150 70 Turn - Off Fall Time
D(off)
nS 250 120 Turn - Off Delay Time
nS 60 27 Turn - On Rise Time
GEN GS
= 6 V, R = -5
DD D(on)
nS 30 15 A, = -3 0 V, I = -2 Turn - On Delay Time
(Note 1) ARACTERISTICS SWITCHING CH
rss
pF 215 Reverse Transfer Capacitance
oss
pF 725 Output Capacitance
f = 1.0 MHz
iss
GS DS
pF 1590 = 0 V, V, V = -10 Input Capacitance
CHARACTERISTICS DYNAMIC
DS FS
14 2 A = -1 V, I = -5 Forward Transconductance
DS GS (on)
-24 V = -5 V, V = -4.5 On-State Drain Current
GS DS(ON)
0.075 0.064 A = -10 V, -2.5 = Static Drain-Source On-Resistance
GS DS(ON)
0.07 0.059 A = -10 V, -2.7 = Static Drain-Source On-Resistance
0.08 0.06 = 125C
GS DS(ON)
0.05 0.041 A = -12 V, -4.5 = Static Drain-Source On-Resistance
-0.7 -0.56 -0.3 = 125C
GS DS (th) GS
-1 -0.7 -0.4 = -250 I = V Gate Threshold Voltage
(Note 1) ON CHARACTERISTICS
DS GS GSSR
nA -100 = 0 V V V, = -8 Gate - Body Leakage, Reverse
DS GS GSSF
nA 100 = 0 V V 8 V, = Gate - Body Leakage, Forward
5C = 5
-10
GS DS DSS
-1 = 0 V V, = -16 Zero Gate Voltage Drain Current
D GS DSS
-20 = -250 = 0 V, I Drain-Source Breakdown Voltage BV
OFF CHARACTERISTICS
Units Max Typ Min Conditions Parameter Symbol
Electrical Characteristics