Product Information

SM6362D1RL

SM6362D1RL electronic component of SPS

Datasheet
DFN-8-EP(6.1x5.2) MOSFETs ROHS

Manufacturer: SPS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4934 ea
Line Total: USD 0.49

3269 - Global Stock
Ships to you between
Tue. 07 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3172 - Global Stock


Ships to you between
Tue. 07 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 0.4676
10 : USD 0.3788
30 : USD 0.3433
100 : USD 0.2959
500 : USD 0.2743
1000 : USD 0.2625

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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The SM6362D1RL with DFN-8-EP(6.1x5.2) MOSFET is a dual N-channel enhancement mode MOSFET manufactured by SPS. It has a drain current rating of 1.2 Amps, a maximum drain-source voltage (VDSS) rating of 20V and boasts a maximum drain-source on state resistance (RDSon) at 25°C of 0.6 Ohms. It also features a low gate charge (Qg) for improved switching performance and a maximum operating junction temperature (Tj) of 175°C. Furthermore, the device is RoHS compliant and uses a DFN-8-EP(6.1x5.2) packaging for ease of integration into applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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